Datasheet > SSM6N357R

SSM6N357R

更新时间： 2023-12-20 18:45:32

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	449K
描述
N-ch x 2 MOSFET, 60 V, 0.65 A, 1.8 Ω@5V, TSOP6F

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SSM6N357R

5. Electrical Characteristics

5.1. Static Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

IGSS

VDS = 0 V, VGS = ±3 V

VDS = 0 V, VGS = ±5 V

VDS = 12 V, VGS = 0 V

VDS = 60 V, VGS = 0 V

ꢀ

1.3

ꢀ

±60

±90

0.5

µA

Drain cut-off current

IDSS

ꢀ

Drain-source breakdown voltage

Gate threshold voltage

V(BR)DSS ID = 10 mA, VGS = 0 V

Vth VDS = VGS , ID = 1 mA

ꢀ

Ω

(Note 1)

ꢀ

2.0

2.4

1.8

ꢀ

Drain-source on-resistance

(Note 2) RDS(ON) ID = 150 mA, VGS = 3 V

ID = 150 mA, VGS = 5 V

1.2

0.8

500

Forward transfer admittance

(Note 2)

|Yfs|

VDS = 12 V, ID = 150 mA

Note 1: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for

this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 2: Pulse measurement.

5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Input capacitance

Symbol

Test Condition

Min

Typ.

Max

Unit

Ciss

Crss

Coss

ton

VDS = 12 V , VGS = 0 V,

f = 1 MHz

ꢀ

2.5

ꢀ

Reverse transfer capacitance

Output capacitance

Switching time (turn-on time)

Switching time (turn-off time)

(Note 1)

VDD = 12 V, VGS = 0 to 3.0 V,

RG = 50 Ω

990

3000

toff

Note 1: See Chapter 5.3

5.3. Switching Time Test Circuit

Fig. 5.3.1 Switching Time Test Circuit

Fig. 5.3.2 Input Waveform/Output Waveform

5.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1

Qgs1

Qgd

VDD = 12 V, ID = 650 mA,

VGS = 5.0 V

ꢀ

1.5

0.2

1.2

ꢀ

Gate-drain charge

Toshiba Electronic Devices & Storage Corporation

2021-01-07

Rev.4.0

1 234 5 6 7...9

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与SSM6N357R相关器件

型号	品牌	获取价格	描述	数据表
SSM6N35AFE	TOSHIBA	获取价格	N-ch x 2 MOSFET, 20 V, 0.25 A, 1.1 Ω@4.5V, SO
SSM6N35AFU	TOSHIBA	获取价格	N-ch x 2 MOSFET, 20 V, 0.25 A, 1.1 Ω@4.5V, SO
SSM6N35FE	TOSHIBA	获取价格	Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N35FE(TE85L,F)	TOSHIBA	获取价格	MOSFET DUAL N-CH 20V .18A ES6
SSM6N35FE,LM(T	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
SSM6N35FU	TOSHIBA	获取价格	TRANSISTOR 180 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, US6, 2-2J1C, 6 PI
SSM6N36FE	TOSHIBA	获取价格	Fiwld Effect Transistor Silicon N-Channel MOS Type
SSM6N36FE,LM(B	TOSHIBA	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SSM6N36FE,LM(T	TOSHIBA	获取价格	暂无描述
SSM6N36TU	TOSHIBA	获取价格	TRANSISTOR 500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, UF6, 2-2T1B, 6 PI

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