型号 | 品牌 | 替代类型 | 描述 | 数据表 |
RFP70N06 | FAIRCHILD |
功能相似 |
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs | |
RFP50N06 | FAIRCHILD |
功能相似 |
50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs | |
RFP12N10L | FAIRCHILD |
功能相似 |
12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSH24D35 | TELEDYNE |
获取价格 |
Output to 75A, 510 Vac with Diagnostics | |
SSH24D50 | TELEDYNE |
获取价格 |
Output to 75A, 510 Vac with Diagnostics | |
SSH25N35 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta | |
SSH25N35A | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta | |
SSH25N40 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta | |
SSH25N40A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
SSH3N70 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 700V, 6ohm, 1-Element, N-Channel, Silicon, Metal-o | |
SSH3N70A | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 700V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o | |
SSH3N90 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247VAR | |
SSH40N15 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Met |