生命周期: | Obsolete | 零件包装代码: | TO-3P |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.72 | 配置: | SINGLE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.065 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSH40N20 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Met | |
SSH40N20A | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Me | |
SSH45N15 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 150V, 0.065ohm, 1-Element, N-Channel, Silicon, Me | |
SSH45N20 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
SSH45N20A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
SSH45N20B | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
SSH45N20B_FP001 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Me | |
SSH48D50 | TELEDYNE |
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Output to 75A, 510 Vac with Diagnostics | |
SSH48D75 | TELEDYNE |
获取价格 |
Output to 75A, 510 Vac with Diagnostics | |
SSH4N55 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 550V, 3ohm, 1-Element, N-Channel, Silicon, Metal-o |