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SS26BF

更新时间: 2024-09-18 14:52:55
品牌 Logo 应用领域
鲁光 - LGE 肖特基二极管
页数 文件大小 规格书
2页 2510K
描述
肖特基二极管

SS26BF 数据手册

 浏览型号SS26BF的Datasheet PDF文件第2页 
SS22BF-SS220BF  
2.0 AMPS. Surface Mount Schottky Barrier Rectifiers  
ALL ROUND  
ALL ROUND  
M
A
V
HE  
D
Features  
E
For surface mounted application  
g
g
Easy pick and place  
A
Metal to silicon rectifier, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low VF  
High surge current capability  
Plastic material used carriers Underwriters  
Laboratory Classification 94V-0  
Epitaxial construction  
Top View  
Bottom View  
High temperature soldering:  
o
g
UNIT  
mm  
A
C
0.26  
0.18  
10  
D
E
HE  
5.5  
5.1  
e
260 C / 10 seconds at terminals  
max  
min  
max  
min  
1.3  
1.1  
51  
4.4  
4.2  
3.7  
3.5  
2.2  
1.9  
86  
1.0  
Mechanical Data  
9°  
173  
165  
146  
138  
216  
200  
mil  
40  
Case: Molded plastic  
43  
7
75  
Terminals: Pure tin plated, lead free.  
Polarity: Indicated by cathode band  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol SS SS SS SS SS SS SS SS SS  
Type Number  
Units  
210BF215BF220BF  
90 100 150 220  
24BF  
40  
22BF23BF  
20 30  
25BF  
50  
26BF29BF  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
60  
42  
60  
V
V
V
VRRM  
VRMS  
VDC  
14  
20  
21  
30  
28  
35  
63 70 105 125  
90 100 150 220  
Maximum DC Blocking Voltage  
40  
50  
Maximum Average Forward Rectified Current  
at TL(See Fig. 1)  
2.0  
A
A
I(AV)  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
50  
IFSM  
Maximum Instantaneous Forward Voltage  
o
0.5  
0.4  
0.70  
0.65  
0.85  
0.70  
0.1  
0.95  
0.80  
(Note 1)  
IF= 2.0A @ 25 C  
o
V
VF  
@ 100 C  
o
0.4  
Maximum DC Reverse Current @ T =25 C at  
A
mA  
mA  
IR  
o
Rated DC Blocking Voltage @ T =125 C  
A
10  
5.0  
Typical Junction Capacitance (Note 3)  
Typical Thermal Resistance ( Note 2 )  
Cj  
130  
pF  
R
17  
75  
o
θJL  
C/W  
R
θJA  
o
Operating Temperature Range  
Storage Temperature Range  
TJ  
-65 to +125  
-65 to +150  
-65 to +150  
C
o
TSTG  
C
Notes:  
1. Pulse Test with PW=300 usec, 1% Duty Cycle  
2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas.  
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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