SMD Schottky Barrier Rectifiers
SS24BF-HF Thru. SS220BF-HF
Reverse Voltage: 40 to 200 Volts
Forward Current: 2.0 Amp
RoHS Device
Halogen Free
SMBF
0.217(5.50)
0.201(5.10)
Features
0.087(2.20)
0.075(1.90)
0.146(3.70)
0.138(3.50)
- Metal silicon junction, majority carrier conduction.
- For surface mounted applications.
- Low power loss, high efficiency.
0.173(4.40)
0.165(4.20)
- High forward surge current capability.
- For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications.
0.051(1.30)
0.043(1.10)
0.010(0.26)
0.007(0.18)
0.039(1.00)
Typ
Mechanical data
- Case: SMBF
Dimensions in inches and (millimeter)
- Terminals: Solderable per MIL-STD-750,
method 2026.
Circuit Diagram
Cathode
Anode
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20%
Symbols
VRRM
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
SS24BF-HF SS26BF-HF SS210BF-HF SS215BF-HF SS220BF-HF Units
40
28
40
60
42
60
100
70
150
105
150
200
140
200
V
V
V
A
VRMS
Maximum DC blocking voltage
VDC
100
2
Maximum average forward rectified current
IF(AV)
Peak forward surge current, 8.3ms
single half sine-wave superimposed
on rated load (JEDEC method)
IFSM
55
45
A
Max instantaneous forward voltage at 2A
VF
IR
0.55
0.70
0.85
0.95
V
Maximum DC reverse current
at rated DC reverse voltage
Tj = 25°C
Tj =100°C
0.5
5
0.3
3
mA
pF
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
Cj
220
110
RθJA
Tj
75
°C/W
°C
-55 ~ +150
-55 ~ +150
Tstg
°C
Notes: 1. Measured at 1 MHz and applied reverse voltage of 4 V D.C
2. P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
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SP-JB035
Comchip Technology CO., LTD.