Datasheet > SS26-HE3/5BT

SS26-HE3/5BT

更新时间： 2024-11-06 19:52:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	85K
描述
DIODE 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

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技术参数
数据手册

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SS26-HE3/5BT 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

SS26-HE3/5BT 数据手册

SS22 thru SS26

Vishay General Semiconductor

www.vishay.com

Surface Mount Schottky Barrier Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Low forward voltage drop

• High surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AA (SMB)

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I_F(AV)

2.0 A

V_RRM

I_FSM

20 V to 60 V

75 A

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

V_F

0.50 V, 0.70 V

125 °C, 150 °C

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS22

SS23

SS24

SS25

SS26

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Max. average forward rectified current at T_L(fig. 1)

I_F(AV)

2.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

E_AS

V_C

Non-repetitive avalanche energy at T_A= 25 °C,

I_AS= 2.0 A, L = 10 mH

Electrostatic discharge capacitor voltage

Human body model: C = 100 pF, R = 1.5 k

8.0

Voltage rate of change (rated V_R)

Operating junction temperature range

Storage temperature range

dV/dt

T_J

10 000

V/µs

°C

- 65 to + 125

- 65 to + 150

T_STG

- 65 to + 150

°C

Revision: 27-Mar-12

Document Number: 88748

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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与SS26-HE3/5BT相关器件

型号	品牌	获取价格	描述	数据表
SS26HE3_A/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AA, SMB, 2 P
SS26HE3_A/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AA, SMB, 2 P
SS26HE3-L	MCC	获取价格	Tape: 5K/Reel, 80K/Ctn;
SS26-HF	COMCHIP	获取价格	Rectifier Diode,
SS26L	TSC	获取价格	2.0 AMPS. Surface Mount Schottky Barrier Rectifiers
SS26L	SUNMATE	获取价格	2A Patch Schottky diode 60V SOD-123 series
SS26L	HOTTECH	获取价格	SOD-123FL
SS26-L	MCC	获取价格	2 Amp Schottky Rectifier 20 to 200 Volts
SS26-LFR	FRONTIER	获取价格	2A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SS26-LTP	MCC	获取价格	2A, 60V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

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