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SS26-M3

更新时间： 2025-07-27 01:25:39
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威世 - VISHAY /
页数 文件大小 规格书
4页 90K
描述
Surface Mount Schottky Barrier Rectifier

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SS26-M3 数据手册

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SS22-M3, SS23-M3, SS24-M3, SS25-M3, SS26-M3  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AA (SMB)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.0 A  
MECHANICAL DATA  
VRRM  
IFSM  
20 V, 30 V, 40 V, 50 V, 60 V  
75 A  
Case: DO-214AA (SMB)  
Molding compound meets UL 94 V-0 flammability rating  
VF  
0.50 V, 0.70 V  
150 °C  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
TJ max.  
Package  
Diode variations  
commercial grade  
DO-214AA (SMB)  
Single  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test  
TYPICAL APPLICATIONS  
Polarity: Color band denotes cathode end  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS22  
SS23  
S3  
SS24  
S4  
SS25  
S5  
SS26  
S6  
UNIT  
Device marking code  
S2  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
V
V
V
A
14  
21  
28  
35  
42  
Maximum DC blocking voltage  
Max. average forward rectified current at TL (fig. 1)  
20  
30  
40  
50  
60  
IF(AV)  
2.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
EAS  
VC  
75  
20  
A
Non-repetitive avalanche energy at TA = 25 °C,  
mJ  
kV  
IAS = 2.0 A, L = 10 mH  
Electrostatic discharge capacitor voltage  
human body model: C = 100 pF, R = 1.5 k  
8.0  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/μs  
°C  
-65 to +150  
-65 to +150  
TSTG  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
TEST  
CONDITIONS  
PARAMETER  
SYMBOL SS22  
SS23  
SS24  
SS25  
SS26  
UNIT  
Maximum instantaneous forward voltage (1)  
2.0 A  
VF  
0.5  
0.7  
V
TA = 25 °C  
TA = 100 °C  
0.4  
10  
Maximum DC reverse current at rated DC  
blocking voltage (1)  
IR  
mA  
Note  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Revision: 04-Aug-15  
Document Number: 89278  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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SS26-M3/52T VISHAY

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 		DIODE SCHOTTKY 2A 60V DO-214AA
SS26-M3/5BT VISHAY

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 		工作温度:-65°C ~ 150°C;最小工作结温:-65°C;最大工作结温（Tj）: 1
SS26-T3 WTE

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AA, SMB, 2 P
SS26-T3-LF WTE

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AA, SMB, 2 P
SS26-TP MCC

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AC, ROHS COM
SS26-TR30 TAITRON

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AA, ROHS COM
SS26-TR70 TAITRON

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AA, ROHS COM
SS26-W FORMOSA

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 		反向峰值电压（Vr）:60V;平均整流电流（Io）:2A;正向压降（Vf）:700mV 2
SS26/52T VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AA, PLASTIC,
SS26/55T VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AA, PLASTIC,

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