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SS26-T3-LF PDF预览

SS26-T3-LF

更新时间: 2024-11-06 19:54:03
品牌 Logo 应用领域
WTE 快速恢复二极管瞄准线光电二极管
页数 文件大小 规格书
4页 41K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

SS26-T3-LF 数据手册

 浏览型号SS26-T3-LF的Datasheet PDF文件第2页浏览型号SS26-T3-LF的Datasheet PDF文件第3页浏览型号SS26-T3-LF的Datasheet PDF文件第4页 
®
SS22 – SS210  
2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE  
WON-TOP ELECTRONICS  
Features  
Low Forward Voltage  
Epitaxial Construction with Oxide Passivation  
Guard Ring for Transient and ESD Protection  
Surge Overload Rating to 50A Peak  
Low Power Loss  
Fast Switching  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
B
D
A
F
C
H
G
E
SMB/DO-214AA  
Min  
Mechanical Data  
Dim  
A
Max  
3.94  
4.70  
2.11  
Case: SMB/DO-214AA, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
3.30  
B
4.06  
C
1.91  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
Weight: 0.093 grams (approx.)  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
0.152  
5.08  
0.305  
5.59  
2.44  
0.203  
1.27  
E
F
2.13  
G
H
0.051  
0.76  
All Dimensions in mm  
Maximum Ratings @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
SS22 SS23 SS24 SS25 SS26 SS28 SS29 SS210 Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
50  
35  
60  
42  
80  
56  
90  
63  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current (Note 1)  
2.0  
50  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
A
Forward Voltage  
@IF = 2.0A  
VFM  
IRM  
CJ  
0.50  
0.70  
0.85  
100  
V
mA  
pF  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
0.5  
10  
Typical Junction Capacitance (Note 2)  
150  
Thermal Resistance, Junction to Ambient (Note 1)  
Thermal Resistance, Junction to Lead (Note 1)  
RθJA  
RθJL  
80  
24  
°C/W  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-55 to +125  
-55 to +150  
°C  
°C  
TSTG  
-55 to +150  
Note: 1. Mounted on FR-4 PCB with 8.0 x 8.0mm copper pads.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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