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SS26HE3/5BT PDF预览

SS26HE3/5BT

更新时间: 2024-11-06 19:54:19
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
4页 99K
描述
DIODE 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

SS26HE3/5BT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:7.23
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.7 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:75 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:60 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SS26HE3/5BT 数据手册

 浏览型号SS26HE3/5BT的Datasheet PDF文件第2页浏览型号SS26HE3/5BT的Datasheet PDF文件第3页浏览型号SS26HE3/5BT的Datasheet PDF文件第4页 
SS22, SS23, SS24, SS25, SS26  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
Available  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
SMB (DO-214AA)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.0 A  
VRRM  
IFSM  
20 V, 30 V, 40 V, 50 V, 60 V  
75 A  
MECHANICAL DATA  
Case: SMB (DO-214AA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
VF  
0.50 V, 0.70 V  
150 °C  
TJ max.  
Package  
Diode variations  
SMB (DO-214AA)  
Single  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS22  
SS23  
S3  
SS24  
S4  
SS25  
S5  
SS26  
S6  
UNIT  
Device marking code  
S2  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
V
V
V
A
14  
21  
28  
35  
42  
Maximum DC blocking voltage  
Max. average forward rectified current at TL (fig. 1)  
20  
30  
40  
50  
60  
IF(AV)  
2.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
EAS  
VC  
75  
20  
A
Non-repetitive avalanche energy at TA = 25 °C,  
mJ  
kV  
IAS = 2.0 A, L = 10 mH  
Electrostatic discharge capacitor voltage  
Human body model: C = 100 pF, R = 1.5 kΩ  
8.0  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/μs  
°C  
-65 to +150  
-65 to +150  
TSTG  
°C  
Revision: 21-Jul-17  
Document Number: 88748  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SS26HE3/5BT 替代型号

型号 品牌 替代类型 描述 数据表
SS26HE3_A/I VISHAY

完全替代

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AA, SMB, 2 P
SS26-E3/5BT VISHAY

类似代替

暂无描述
SS26-E3/52T VISHAY

类似代替

DIODE 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN,

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