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SS26-HE3 PDF预览

SS26-HE3

更新时间: 2024-11-06 18:32:31
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
4页 310K
描述
DIODE 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode

SS26-HE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.58
其他特性:FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:75 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:60 V
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

SS26-HE3 数据手册

 浏览型号SS26-HE3的Datasheet PDF文件第2页浏览型号SS26-HE3的Datasheet PDF文件第3页浏览型号SS26-HE3的Datasheet PDF文件第4页 
SS22 thru SS26  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
2.0 A  
20 V to 60 V  
75 A  
VF  
0.50 V, 0.70 V  
125 °C, 150 °C  
Tj max.  
DO-214AA (SMB)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AA (SMB)  
• Ideal for automated placement  
Epoxy meets UL 94V-0 Flammability rating  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High surge capability  
Polarity: Color band denotes cathode end  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in low voltage high frequency inverters, free-  
wheeling, dc-to-dc converters, and polarity protection  
applications  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Device marking code  
Symbol  
SS22  
S2  
SS23  
S3  
SS24  
S4  
SS25  
S5  
SS26  
S6  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
V
V
V
A
14  
20  
21  
30  
28  
40  
35  
50  
42  
60  
Maximum DC blocking voltage  
Max. average forward rectified current  
at TL (See Fig. 1)  
IF(AV)  
2.0  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
EAS  
75  
20  
A
Non-repetitive avalanche energy  
mJ  
at TA = 25 °C, IAS = 2.0 A, L = 10 mH  
Electrostatic discharge capacitor voltage  
VC  
8.0  
KV  
Human body model: C = 100 pF, R = 1.5 kΩ  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10000  
V/µs  
°C  
- 65 to + 125  
- 65 to + 150  
TSTG  
- 65 to + 150  
°C  
Document Number 88784  
14-Jul-05  
www.vishay.com  
1

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