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SS26-HE3/52T PDF预览

SS26-HE3/52T

更新时间: 2024-11-06 19:52:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 85K
描述
DIODE 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

SS26-HE3/52T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:ROHS COMPLIANT, PLASTIC, SMB, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

SS26-HE3/52T 数据手册

 浏览型号SS26-HE3/52T的Datasheet PDF文件第2页浏览型号SS26-HE3/52T的Datasheet PDF文件第3页浏览型号SS26-HE3/52T的Datasheet PDF文件第4页 
SS22 thru SS26  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AA (SMB)  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.0 A  
VRRM  
IFSM  
20 V to 60 V  
75 A  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
VF  
0.50 V, 0.70 V  
125 °C, 150 °C  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS22  
SS23  
S3  
SS24  
S4  
SS25  
S5  
SS26  
S6  
UNIT  
Device marking code  
S2  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
V
V
V
A
14  
21  
28  
35  
42  
Maximum DC blocking voltage  
Max. average forward rectified current at TL (fig. 1)  
20  
30  
40  
50  
60  
IF(AV)  
2.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
EAS  
VC  
75  
20  
A
Non-repetitive avalanche energy at TA = 25 °C,  
mJ  
kV  
IAS = 2.0 A, L = 10 mH  
Electrostatic discharge capacitor voltage  
Human body model: C = 100 pF, R = 1.5 k  
8.0  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/µs  
°C  
- 65 to + 125  
- 65 to + 150  
TSTG  
- 65 to + 150  
°C  
Revision: 27-Mar-12  
Document Number: 88748  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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