Datasheet > SS26-E3/5BT

SS26-E3/5BT

更新时间： 2024-09-15 19:54:19

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威世 - VISHAY		/
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数据手册
替代型号

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SS26-E3/5BT 数据手册

SS22, SS23, SS24, SS25, SS26

www.vishay.com

Vishay General Semiconductor

Surface Mount Schottky Barrier Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Low forward voltage drop

• High surge capability

Available

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMB (DO-214AA)

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

PRIMARY CHARACTERISTICS

I_F(AV)

2.0 A

V_RRM

I_FSM

20 V, 30 V, 40 V, 50 V, 60 V

75 A

MECHANICAL DATA

Case: SMB (DO-214AA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

V_F

0.50 V, 0.70 V

150 °C

T_Jmax.

Package

Diode variations

SMB (DO-214AA)

Single

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, .....)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

Polarity: color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS22

SS23

SS24

SS25

SS26

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Max. average forward rectified current at T_L(fig. 1)

I_F(AV)

2.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

E_AS

V_C

Non-repetitive avalanche energy at T_A= 25 °C,

I_AS= 2.0 A, L = 10 mH

Electrostatic discharge capacitor voltage

Human body model: C = 100 pF, R = 1.5 kΩ

8.0

Voltage rate of change (rated V_R)

Operating junction temperature range

Storage temperature range

dV/dt

T_J

10 000

V/μs

°C

-65 to +150

T_STG

°C

Revision: 21-Jul-17

Document Number: 88748

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SS26-E3/5BT 替代型号

型号	品牌	替代类型	描述	数据表
SS26-E3/51T	VISHAY	完全替代	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-214AA, ROHS COM

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