Datasheet > SQ9945AE

SQ9945AE

更新时间： 2024-01-17 11:28:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	119K
描述
Package with Low Thermal Resistance

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SQ9945AE 数据手册

SQ9945AEY

Vishay Siliconix

Automotive

Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• TrenchFET^®Power MOSFET

0.080

3.7

Pb-free

• Package with Low Thermal Resistance

Available

_DS(on)(Ω) at V_GS= 10 V

RoHS*

I_D(A)

AEC-Q101 RELIABILITY

• Passed all AEC-Q101 Reliability Testing

• Characterization Ongoing

COMPLIANT

Configuration

Dual

SO-8

Top View

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

SO-8

SQ9945AEY-T1-E3

SQ9945AEY-T1

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

- 3.7

Continuous Drain Current^a

I_D

- 3.2

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

I_DM

E_AS

I_AS

Single Pulse Avalanche Energy

Single Pulse Avalanche Current

L = 0.1 mH

2.4

T_C= 25 °C

T_A= 70 °C

Maximum Power Dissipation^b

P_D

1.7

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Case (Drain)

R_thJC

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR-4 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 74499

S-81559-Rev. B, 23-Oct-08

www.vishay.com

12 3 4 5 6 7...9

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