5秒后页面跳转
SQA442EJ-T1_GE3 PDF预览

SQA442EJ-T1_GE3

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 281K
描述
MOSFET N-CHAN 60V POWERPAK SC-70

SQA442EJ-T1_GE3 数据手册

 浏览型号SQA442EJ-T1_GE3的Datasheet PDF文件第2页浏览型号SQA442EJ-T1_GE3的Datasheet PDF文件第3页浏览型号SQA442EJ-T1_GE3的Datasheet PDF文件第4页浏览型号SQA442EJ-T1_GE3的Datasheet PDF文件第5页浏览型号SQA442EJ-T1_GE3的Datasheet PDF文件第6页浏览型号SQA442EJ-T1_GE3的Datasheet PDF文件第7页 
SQA442EJ  
Vishay Siliconix  
www.vishay.com  
Automotive N-Channel 60 V (D-S) 175 °C MOSFET  
FEATURES  
• TrenchFET® power MOSFET  
• AEC-Q101 qualified d  
PowerPAK® SC-70-6L Single  
D
D
5
6
S
4
• 100 % Rg and UIS tested  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
S
7
1
D
2
D
3
D
1
Top View  
G
Bottom View  
Marking Code: QDXXXX  
PRODUCT SUMMARY  
VDS (V)  
G
60  
0.032  
0.048  
9
R
DS(on) () at VGS = 10 V  
DS(on) () at VGS = 4.5 V  
R
ID (A)  
S
Configuration  
Package  
Single  
PowerPAK SC-70  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
60  
V
VGS  
20  
TC = 25 °C  
9
8.3  
Continuous drain current a  
ID  
T
C = 125 °C  
Continuous source current (diode conduction) a  
Pulsed drain current a  
IS  
9
A
IDM  
IAS  
24.5  
13  
Single pulse avalanche current  
Single pulse avalanche energy  
L = 0.1 mH  
EAS  
8.4  
mJ  
W
TC = 25 °C  
13.6  
4.5  
Maximum power dissipation b  
PD  
TC = 125 °C  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) e, f  
TJ, Tstg  
-55 to +175  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
90  
UNIT  
Junction-to-ambient  
PCB mount c  
°C/W  
Junction-to-case (drain)  
RthJC  
11  
Notes  
a. Package limited  
b. Pulse test; pulse width 300 μs, duty cycle 2 %  
c. When mounted on 1" square PCB (FR4 material)  
d. Parametric verification ongoing  
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
S18-0149-Rev. A, 05-Feb-18  
Document Number: 75579  
1
For technical questions, contact: automos.techsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SQA442EJ-T1_GE3相关器件

型号 品牌 获取价格 描述 数据表
SQA444CEJW VISHAY

获取价格

Automotive N-Channel 60 V (D-S) 175 °C MOSFET
SQA446CEJW VISHAY

获取价格

Automotive N-Channel 20 V (D-S) 175 °C MOSFET
SQA448CEJW VISHAY

获取价格

Automotive N-Channel 60 V (D-S) 175 °C MOSFET
SQA54AB TI

获取价格

Analog System Monitor and Controller
SQA600CEJW VISHAY

获取价格

Automotive N-Channel 80 V (D-S) 175 °C MOSFET
SQA602CEJW VISHAY

获取价格

Automotive N-Channel 80 V (D-S) 175 °C MOSFET
SQA604CEJW VISHAY

获取价格

Automotive N-Channel 80 V (D-S) 175 °C MOSFET
SQA700CEJW VISHAY

获取价格

Automotive N-Channel 100 V (D-S) 175 °C MOSFE
SQAC0806 ALLIED

获取价格

SMD Square Air Core Inductors
SQAC0806-12N-RC ALLIED

获取价格

SMD Square Air Core Inductors