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SQ9945BEY-T1-GE3 PDF预览

SQ9945BEY-T1-GE3

更新时间: 2024-02-29 21:08:18
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管光电二极管PC
页数 文件大小 规格书
9页 254K
描述
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

SQ9945BEY-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69Samacsys Confidence:
Samacsys Status:ReleasedSamacsys PartID:603518
Samacsys Pin Count:8Samacsys Part Category:Undefined or Miscellaneous
Samacsys Package Category:OtherSamacsys Footprint Name:SOIC127P600X175-8N
Samacsys Released Date:2017-01-12 11:18:21Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):5.4 A最大漏源导通电阻:0.082 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):36 pF
JESD-30 代码:R-PDSO-G8元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

SQ9945BEY-T1-GE3 数据手册

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SQ9945BEY  
Vishay Siliconix  
www.vishay.com  
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• TrenchFET® Power MOSFET  
• 100 % Rg and UIS Tested  
• AEC-Q101 Qualified  
60  
0.064  
0.082  
6
RDS(on) () at VGS = 10 V  
RDS(on) () at VGS = 4.5 V  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
ID (A) per leg  
Configuration  
Dual  
D
1
D
SO-8  
2
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
1
G
2
G
S
Top View  
S
2
1
N-Channel MOSFET  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
SO-8  
SQ9945BEY-T1-GE3  
Lead (Pb)-free and Halogen-free  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
60  
V
Gate-Source Voltage  
VGS  
20  
TC = 25 °C  
5.4  
Continuous Drain Current  
ID  
TC = 125 °C  
3.1  
Continuous Source Current (Diode Conduction)a  
Pulsed Drain Currentb  
IS  
3.6  
A
IDM  
IAS  
EAS  
21.5  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
8.5  
L = 0.1 mH  
TC = 25 °C  
3.6  
mJ  
W
4
1.3  
Maximum Power Dissipationb  
PD  
T
C = 125 °C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
112  
38  
UNIT  
Junction-to-Ambient  
PCB Mountc  
°C/W  
Junction-to-Foot (Drain)  
RthJF  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 μs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR-4 material).  
S12-1522-Rev. C, 25-Jun-12  
Document Number: 71504  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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