是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, S-PDSO-N3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.71 |
雪崩能效等级(Eas): | 5 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 7.8 A | 最大漏源导通电阻: | 0.028 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | S-PDSO-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 24 A | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SQA410EJ-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 7.8 A, 20 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM |
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SQA411CEJW | VISHAY |
获取价格 |
Automotive P-Channel 60 V (D-S) 175 °C MOSFET |
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SQA413CEJW | VISHAY |
获取价格 |
Automotive P-Channel 20 V (D-S) 175 °C MOSFET |
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SQA440CEJW | VISHAY |
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Automotive N-Channel 40 V (D-S) 175 °C MOSFET |
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SQA442EJ-T1_GE3 | VISHAY |
获取价格 |
MOSFET N-CHAN 60V POWERPAK SC-70 |
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SQA444CEJW | VISHAY |
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Automotive N-Channel 60 V (D-S) 175 °C MOSFET |
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SQA446CEJW | VISHAY |
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Automotive N-Channel 20 V (D-S) 175 °C MOSFET |
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SQA448CEJW | VISHAY |
获取价格 |
Automotive N-Channel 60 V (D-S) 175 °C MOSFET |
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SQA54AB | TI |
获取价格 |
Analog System Monitor and Controller |
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SQA600CEJW | VISHAY |
获取价格 |
Automotive N-Channel 80 V (D-S) 175 °C MOSFET |
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