Datasheet > SQ9945CEY

SQ9945CEY

更新时间： 2024-09-25 14:54:03

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威世 - VISHAY		/
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描述
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

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SQ9945CEY 数据手册

SQ9945CEY

Vishay Siliconix

www.vishay.com

Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

SO-8 Dual

D₂

• 100 % R_gand UIS tested

• AEC-Q101 qualified

D₁

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

G₂

S₂

₁

S₁

Top View

PRODUCT SUMMARY

V_DS(V)

_DS(on)() at V_GS= 10 V

_DS(on)() at V_GS= 4.5 V

0.064

0.082

5.4

I_D(A) per leg

N-Channel MOSFET

Configuration

Dual

ORDERING INFORMATION

Package

SO-8

SQ9945CEY

(for detailed order number please see www.vishay.com/doc?79771)

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

5.4

Continuous Drain Current

I_D

_C= 125 °C

3.1

Continuous Source Current (Diode Conduction)

Pulsed Drain Current ^a

I_S

3.6

I_DM

I_AS

21.5

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

8.5

L = 0.1 mH

E_AS

3.6

_C= 25 °C

1.3

Maximum Power Dissipation

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

112

UNIT

Junction-to-Ambient

PCB Mount ^b

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR4 material).

S23-0367-Rev. A, 29-May-2023

Document Number: 62253

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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