Datasheet > SQA403EJ-T1_GE3

SQA403EJ-T1_GE3

更新时间： 2024-09-24 22:58:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	269K
描述
MOSFET P-CHAN 30V

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数据手册

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SQA403EJ-T1_GE3 数据手册

SQA403EJ

Vishay Siliconix

www.vishay.com

Automotive P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

• AEC-Q101 qualified ^d

PowerPAK^®SC-70-6L Single

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Top View

Bottom View

Marking Code: QFXXXX

PRODUCT SUMMARY

V_DS(V)

-30

0.020

0.033

-10

_DS(on)() at V_GS= -10 V

_DS(on)() at V_GS= -4.5 V

P-Channel MOSFET

I_D(A)

Configuration

Package

Single

PowerPAK SC-70

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

-10

Continuous drain current

I_D

_C= 125 °C

-10

Continuous source current (diode conduction) ^a

Pulsed drain current ^b

I_S

I_DM

I_AS

E_AS

-40

Single pulse avalanche current

Single pulse avalanche energy

L = 0.1 mH

11.25

13.6

4.5

T_C= 25 °C

Maximum power dissipation ^b

P_D

T_C= 125 °C

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-ambient

PCB mount ^c

°C/W

Junction-to-case (drain)

R_thJF

Notes

a. Package limited

b. Pulse test; pulse width  300 μs, duty cycle  2 %

c. When mounted on 1" square PCB (FR4 material)

d. Parametric verification ongoing

S19-0524-Rev. B, 17-Jun-2019

Document Number: 76242

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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