Datasheet > SQ9945BEY_13

SQ9945BEY_13

更新时间： 2024-01-25 21:44:24

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	254K
描述
Automotive Dual N-Channel 60 V (D-S) 175 Â°C MOSFET

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SQ9945BEY_13 数据手册

SQ9945BEY

Vishay Siliconix

www.vishay.com

Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• TrenchFET^®Power MOSFET

• 100 % R_gand UIS Tested

• AEC-Q101 Qualified

0.064

0.082

R_DS(on)() at V_GS= 10 V

R_DS(on)() at V_GS= 4.5 V

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

I_D(A) per leg

Configuration

Dual

SO-8

Top View

N-Channel MOSFET

ORDERING INFORMATION

Package

SO-8

SQ9945BEY-T1-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

T_C= 25 °C

5.4

Continuous Drain Current

I_D

T_C= 125 °C

3.1

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

3.6

I_DM

I_AS

E_AS

21.5

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

8.5

L = 0.1 mH

T_C= 25 °C

3.6

1.3

Maximum Power Dissipation^b

P_D

_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

112

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

S12-1522-Rev. C, 25-Jun-12

Document Number: 71504

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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