SQ7415AENW
Vishay Siliconix
www.vishay.com
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• Low thermal resistance PowerPAK® 1212-8W
package with 1.07 mm profile
PowerPAK® 1212-8W Single
D
8
D
7
D
6
D
5
• AEC-Q101 qualified
• Wettable flank terminals
• 100 % Rg and UIS tested
• Material categorization:
1
S
2
S
for
definitions
of
compliance
please
see
3
G
1
www.vishay.com/doc?99912
Top View
Bottom View
S
Marking code: Q021
PRODUCT SUMMARY
VDS (V)
G
-60
0.065
0.090
-16
RDS(on) () at VGS = -10 V
RDS(on) () at VGS = -4.5 V
P-Channel MOSFET
ID (A)
D
Configuration
Package
Single
PowerPAK 1212-8W
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
Gate-source voltage
VDS
-60
20
V
VGS
T
C = 25 °C a
C = 125 °C
-16
Continuous drain current
ID
T
-11
Continuous source current (diode conduction)a
Pulsed drain current b
IS
-16
A
IDM
IAS
-64
Single pulse avalanche current
Single pulse avalanche energy
-23
L = 0.1 mH
EAS
26
mJ
W
TC = 25 °C
53
Maximum power dissipation b
PD
TC = 125 °C
17
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
TJ, Tstg
-55 to +175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
81
UNIT
Junction-to-ambient
PCB Mount c
°C/W
Junction-to-case (drain)
RthJC
2.8
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S20-0765, Rev. B, 12-Oct-2020
Document Number: 76598
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000