Datasheet > SQ7415EN

SQ7415EN

更新时间： 2024-02-08 22:54:43

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威世 - VISHAY		/
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描述
Automotive P-Channel 60 V (D-S) 175 °C MOSFET

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SQ7415EN 数据手册

SQ7415EN

Vishay Siliconix

Automotive

P-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• TrenchFET^®Power MOSFET

- 60

0.065

- 5.7

Pb-free

• Package with Low Thermal Resistance

Available

_DS(on)(Ω) at V_GS= 10 V

RoHS*

I_D(A)

AEC-Q101 RELIABILITY

• Passed all AEC-Q101 Reliability Testing

COMPLIANT

Configuration

Single

PowerPAK 1212-8

3.30 mm

P-Channel MOSFET

Bottom View

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

PowerPAK 1212-8

SQ7415EN-T1-E3

SQ7415EN-T1

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

- 60

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

- 3.6^a

Continuous Drain Current^a

I_D

- 2.9^a

- 1.3^a

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

I_DM

E_AS

I_AS

- 30

Single Pulse Avalanche Energy

Single Pulse Avalanche Current

L = 0.1 mH

1.5

T_C= 25 °C

T_A= 70 °C

Maximum Power Dissipation^b

P_D

0.8

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Case (Drain)

R_thJC

2.4

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR-4 material).

Document Number: 74488

S-81558-Rev. B, 01-Jul-08

www.vishay.com

12 3 4 5 6 7...9

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