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SQ7415EN-T1 PDF预览

SQ7415EN-T1

更新时间: 2024-02-02 04:38:44
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 136K
描述
Automotive P-Channel 60 V (D-S) 175 °C MOSFET

SQ7415EN-T1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:SMALL OUTLINE, S-XDSO-C5
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.77
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):3.6 A
最大漏极电流 (ID):3.6 A最大漏源导通电阻:0.065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-XDSO-C5
JESD-609代码:e0元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):3.8 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SQ7415EN-T1 数据手册

 浏览型号SQ7415EN-T1的Datasheet PDF文件第2页浏览型号SQ7415EN-T1的Datasheet PDF文件第3页浏览型号SQ7415EN-T1的Datasheet PDF文件第4页浏览型号SQ7415EN-T1的Datasheet PDF文件第5页浏览型号SQ7415EN-T1的Datasheet PDF文件第6页浏览型号SQ7415EN-T1的Datasheet PDF文件第7页 
SQ7415EN  
Vishay Siliconix  
Automotive  
P-Channel 60 V (D-S) 175 °C MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• TrenchFET® Power MOSFET  
- 60  
0.065  
- 5.7  
Pb-free  
• Package with Low Thermal Resistance  
Available  
R
DS(on) (Ω) at VGS = 10 V  
RoHS*  
ID (A)  
AEC-Q101 RELIABILITY  
• Passed all AEC-Q101 Reliability Testing  
COMPLIANT  
Configuration  
Single  
PowerPAK 1212-8  
S
S
3.30 mm  
3.30 mm  
1
G
S
2
S
3
G
4
D
8
D
7
D
P-Channel MOSFET  
D
6
D
5
Bottom View  
ORDERING INFORMATION  
Package  
Lead (Pb)-free  
SnPb  
PowerPAK 1212-8  
SQ7415EN-T1-E3  
SQ7415EN-T1  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
- 60  
V
Gate-Source Voltage  
VGS  
20  
TC = 25 °C  
TC = 70 °C  
- 3.6a  
Continuous Drain Currenta  
ID  
- 2.9a  
- 1.3a  
A
Continuous Source Current (Diode Conduction)a  
Pulsed Drain Currentb  
IS  
IDM  
EAS  
IAS  
- 30  
Single Pulse Avalanche Energy  
Single Pulse Avalanche Current  
-
mJ  
A
L = 0.1 mH  
-
1.5  
TC = 25 °C  
TA = 70 °C  
Maximum Power Dissipationb  
PD  
W
0.8  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
81  
UNIT  
Junction-to-Ambient  
PCB Mountc  
°C/W  
Junction-to-Case (Drain)  
RthJC  
2.4  
Notes  
a. Package limited.  
b. Pulse test; pulse width 300 µs, duty cycle 2 %.  
c. When mounted on 1" square PCB (FR-4 material).  
Document Number: 74488  
S-81558-Rev. B, 01-Jul-08  
www.vishay.com  
1

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