Datasheet > SQ7415AEN-T1-GE3

SQ7415AEN-T1-GE3

更新时间： 2024-01-20 19:27:30

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
14页	577K
描述
Automotive P-Channel 60 V (D-S) 175 Â°C MOSFET

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SQ7415AEN-T1-GE3 数据手册

SQ7415AEN

Vishay Siliconix

www.vishay.com

Automotive P-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• TrenchFET^®Power MOSFET

- 60

0.065

0.090

- 16

• PowerPAK^®Package

- Low Thermal Resistance, R_thJC

- Low 1.07 mm Profile

_DS(on)() at V_GS= - 10 V

_DS(on)() at V_GS= - 4.5 V



I_D(A)

• AEC-Q101 Qualified^d

Configuration

Single

• 100 % R_gand UIS Tested

PowerPAK 1212-8

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

3.30 mm

P-Channel MOSFET

Bottom View

Marking Code: Q014

ORDERING INFORMATION

Package

PowerPAK 1212-8

Lead (Pb)-free and Halogen-free

SQ7415AEN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

- 60

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C^a

_C= 125 °C

- 16

Continuous Drain Current

I_D

- 11

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

- 16

I_DM

I_AS

E_AS

- 64

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

- 23

L = 0.1 mH

T_C= 25 °C

Maximum Power Dissipation^b

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{e, f}

T_J, T_stg

- 55 to + 175

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Case (Drain)

R_thJC

2.8

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

S13-1891, Rev. C, 26-Aug-13

Document Number: 67042

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...14

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与SQ7415AEN-T1-GE3相关器件

型号	品牌	获取价格	描述	数据表
SQ7415AENW	VISHAY	获取价格	Automotive P-Channel 60 V (D-S) 175 Â°C MOSFE
SQ7415AENW-T1_GE3	VISHAY	获取价格	MOSFET P-CH 60V 16A POWERPAK1212
SQ7415CENW	VISHAY	获取价格	Automotive P-Channel 60 V (D-S) 175 °C MOSFET
SQ7415EN	VISHAY	获取价格	Automotive P-Channel 60 V (D-S) 175 °C MOSFET
SQ7415EN-T1	VISHAY	获取价格	Automotive P-Channel 60 V (D-S) 175 °C MOSFET
SQ7415EN-T1-E3	VISHAY	获取价格	Automotive P-Channel 60 V (D-S) 175 °C MOSFET
SQ742	POLYFET	获取价格	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
SQ824	VANLONG	获取价格	824.25 MHz Two-Port SAW Resonator
SQ865	VANLONG	获取价格	865.00 MHz Two-Port SAW Resonator
SQ868M30	VANLONG	获取价格	868.30 MHz Two-Port SAW Resonator

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