SQ4182EY-T1_GE3 PDF预览

SQ4182EY-T1_GE3

更新时间: 2025-09-16 19:06:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 247K
描述
元器件封装:8-SOIC;

SQ4182EY-T1_GE3 数据手册

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SQ4182EY  
Vishay Siliconix  
www.vishay.com  
Automotive N-Channel 30 V (D-S) 175 °C MOSFET  
FEATURES  
• TrenchFET® power MOSFET  
SO-8 Single  
D
5
D
6
• AEC-Q101 qualified  
D
7
D
8
• 100 % Rg and UIS tested  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
4
G
3
S
2
S
D
1
S
Top View  
PRODUCT SUMMARY  
VDS (V)  
30  
G
R
DS(on) () at VGS = 10 V  
DS(on) () at VGS = 4.5 V  
0.0038  
0.0050  
32  
R
N-Channel MOSFET  
ID (A)  
S
Configuration  
Single  
ORDERING INFORMATION  
Package  
SO-8  
SQ4182EY  
Lead (Pb)-free and halogen-free  
(for detailed order number please see www.vishay.com/doc?79771)  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
30  
V
VGS  
20  
T
C = 25 °C a  
32  
18  
Continuous drain current  
ID  
TC = 125 °C  
Continuous source current (diode conduction)  
Pulsed drain current b  
IS  
6.4  
A
IDM  
IAS  
100  
Single pulse avalanche current  
Single pulse avalanche energy  
60  
L = 0.1 mH  
EAS  
180  
mJ  
W
TC = 25 °C  
7.1  
Maximum power dissipation b  
PD  
TC = 125 °C  
2.3  
Operating junction and storage temperature range  
TJ, Tstg  
-55 to +175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
80  
UNIT  
Junction-to-ambient  
PCB mount c  
°C/W  
Junction-to-foot (drain)  
RthJF  
21  
Notes  
a. Package limited  
b. Pulse test; pulse width 300 μs, duty cycle 2 %  
c. When mounted on 1" square PCB (FR4 material)  
S21-0678-Rev. D, 21-Jun-2021  
Document Number: 67917  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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