Datasheet > SQ1902AEL

SQ1902AEL

更新时间： 2024-09-17 14:54:39

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描述
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET

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SQ1902AEL 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

SQ1902AEL 数据手册

SQ1902AEL

Vishay Siliconix

www.vishay.com

Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• TrenchFET^®power MOSFET

• 100 % R_gand UIS tested

• AEC-Q101 qualified ^c

_DS(on)(Ω) at V_GS= 4.5 V

_DS(on)(Ω) at V_GS= 2.5 V

0.415

0.600

0.78

• Material categorization:

I_D(A)

for definitions of compliance please see

www.vishay.com/doc?99912

Configuration

Package

Dual

SC-70

SOT-363

SC-70 Dual (6 leads)

D₂

D₁

S₂

G₂

D₁

G₂

G₁

D₂

S₂

N-Channel MOSFET

S₁

N-Channel MOSFET

G₁

S₁

Top View

Marking Code: 9P

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

0.78

0.45

0.54

Continuous Drain Current

I_D

_C= 125 °C

Continuous Source Current (Diode Conduction)

Pulsed Drain Current ^a

I_S

I_DM

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

3.5

L = 0.1 mH

0.6

T_C= 25 °C

0.43

0.14

-55 to +175

Maximum Power Dissipation ^a

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

460

UNIT

Junction-to-Ambient

PCB Mount ^b

°C/W

Junction-to-Foot (Drain)

R_thJF

350

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. When mounted on 1" square PCB (FR4 material).

c. Parametric verification ongoing.

S15-1917-Rev. A, 17-Aug-15

Document Number: 62977

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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