Datasheet > SQ1912EEH

SQ1912EEH

更新时间： 2024-09-16 11:59:35

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
12页	1063K
描述
Automotive Dual N-Channel 20 V (D-S) 175 Â°C MOSFET

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SQ1912EEH 数据手册

SQ1912EEH

Automotive Dual N-Channel

20 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

PRODUCT SUMMARY

V_DS(V)

_DS(on)() at V_GS= 4.5 V

R_DS(on)() at V_GS= 2.5 V

_DS(on)() at V_GS= 1.8 V

_D(A)

Configuration

Definition

• TrenchFET^®Power MOSFET

• AEC-Q101 Qualified^d

0.280

0.360

0.450

0.8

• 100 % R_gTested

• Typical ESD Protection: 800 V

• Compliant to RoHS Directive 2002/95/EC

Dual

SOT-363

SC-70 (6-LEADS)

Marking Code

9M XX

1 k

Lot Traceability

and Date Code

Part # Code

Top View

ORDERING INFORMATION

Package

SC-70

SQ1912EEH-T1-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

0.8

T_C= 25 °C

Continuous Drain Current^a

I_D

T_C= 125 °C

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

I_DM

T_C= 25 °C

T_C= 125 °C

1.5

0.5

Maximum Power Dissipation^b

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

220

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Foot (Drain)

R_thJF

100

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

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