Datasheet > SQ1912EH

SQ1912EH

更新时间： 2024-09-17 01:19:31

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威世 - VISHAY		/
页数	文件大小	规格书
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描述
Automotive Dual N-Channel 20 V (D-S) 175 Â°C MOSFET

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SQ1912EH 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

SQ1912EH 数据手册

SQ1912EH

Vishay Siliconix

www.vishay.com

Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• TrenchFET^®power MOSFET

• AEC-Q101 qualified

• 100 % R_gtested

R_DS(on)(Ω) at V_GS= 4.5 V

R_DS(on)(Ω) at V_GS= 2.5 V

R_DS(on)(Ω) at V_GS= 1.8 V

0.280

0.360

0.450

0.8

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

I_D(A)

Configuration

Package

Dual

SC-70

SOT-363

SC-70 Dual (6 leads)

S₂

G₂

D₁

D₂

G₁

S₁

Top View

Marking Code: 9H

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

0.8

Continuous Drain Current ^a

I_D

_C= 125 °C

Continuous Source Current (Diode Conduction) ^a

Pulsed Drain Current ^b

I_S

I_DM

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

3.8

7.2

1.5

0.5

L = 0.1 mH

T_C= 25 °C

T_C= 125 °C

Maximum Power Dissipation ^b

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

220

UNIT

Junction-to-Ambient

PCB Mount ^c

°C/W

Junction-to-Foot (Drain)

R_thJF

100

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

S15-1918 Rev. A, 17-Aug-15

Document Number: 67394

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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