Datasheet > SQ1922AEEH

SQ1922AEEH

更新时间： 2024-09-17 14:53:59

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威世 - VISHAY		/
页数	文件大小	规格书
17页	408K
描述
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET

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SQ1922AEEH 数据手册

SQ1922AEEH

Vishay Siliconix

www.vishay.com

Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

SOT-363

SC-70 Dual (6 leads)

S₂

• AEC-Q101 qualified

G₂

• 100 % R_gtested

D₁

• Typical ESD protection: 800 V

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

D₂

G₁

S₁

Top View

Marking Code: 8T

PRODUCT SUMMARY

V_DS(V)

_DS(on)() at V_GS= 4.5 V

0.300

0.85

I_D(A) per leg

Configuration

Package

Dual

SC-70

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

0.85

0.53

0.63

3.3

Continuous drain current ^a

I_D

_C= 125 °C

Continuous source current (diode conduction) ^a

Pulsed drain current ^b

I_S

I_DM

I_AS

E_AV

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

0.2

T_C= 25 °C

T_C= 125 °C

1.5

Maximum power dissipation ^b

P_D

0.5

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

460

UNIT

Junction-to-ambient

PCB mount ^c

°C/W

Junction-to-foot (drain)

R_thJF

350

Notes

a. Package limited

b. Pulse test; pulse width  300 μs, duty cycle  2 %

c. When mounted on 1" square PCB (FR4 material)

S18-1111-Rev. A, 12-Nov-2018

Document Number: 76699

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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