Datasheet > SQ1902AEL-T1_GE3

SQ1902AEL-T1_GE3

更新时间： 2024-11-07 09:05:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	253K
描述
Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

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SQ1902AEL-T1_GE3 数据手册

SQ1912EH

Vishay Siliconix

www.vishay.com

Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®power MOSFET

SOT-363

SC-70 Dual (6 leads)

S₂

• AEC-Q101 qualified

G₂

• 100 % R_gtested

D₁

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

D₂

G₁

S₁

Top View

Marking Code: 9H

PRODUCT SUMMARY

V_DS(V)

_DS(on)() at V_GS= 4.5 V

_DS(on)() at V_GS= 2.5 V

_DS(on)() at V_GS= 1.8 V

0.280

0.360

0.450

0.8

I_D(A)

Configuration

Package

Dual

SC-70

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

0.8

Continuous drain current ^a

I_D

_C= 125 °C

Continuous source current (diode conduction) ^a

Pulsed drain current ^b

I_S

I_DM

I_AS

E_AS

Single pulse avalanche current

Single pulse avalanche energy

3.8

7.2

1.5

0.5

L = 0.1 mH

T_C= 25 °C

T_C= 125 °C

Maximum power dissipation ^b

P_D

Operating junction and storage temperature range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

220

UNIT

Junction-to-ambient

PCB mount ^c

°C/W

Junction-to-foot (drain)

R_thJF

100

Notes

a. Package limited

b. Pulse test; pulse width  300 μs, duty cycle  2 %

c. When mounted on 1" square PCB (FR4 material)

S17-0425 Rev. B, 27-Mar-17

Document Number: 67394

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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