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SPP80N03 PDF预览

SPP80N03

更新时间: 2024-11-29 22:26:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
9页 81K
描述
SIPMOS Power Transistor

SPP80N03 数据手册

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SPP80N03  
SIPMOS Power Transistor  
Product Summary  
Features  
Drain source voltage  
30  
0.006  
80  
V
V
DS  
N channel  
Drain-Source on-state resistance  
Continuous drain current  
R
Enhancement mode  
DS(on)  
A
I
D
Avalanche rated  
dv/dt rated  
175°C operating temperature  
Pin 1 Pin 2 Pin 3  
Type  
Package  
Ordering Code  
Packaging  
G
D
S
SPP80N03  
SPB80N03  
P-TO220-3-1 Q67040-S4734-A2 Tube  
P-TO263-3-2 Q67040-S4734-A3 Tabe and Reel  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
Continuous drain current  
A
I
D
1)  
T = 25 °C,  
80  
80  
C
T = 100 °C  
C
Pulsed drain current  
320  
IDpulse  
T = 25 °C  
C
Avalanche energy, single pulse  
700  
mJ  
E
E
AS  
AR  
I = 80 A, V = 25 V, R = 25 Ω  
D
DD  
GS  
30  
6
Avalanche energy, periodic limited by T  
jmax  
kV/µs  
Reverse diode dv/dt  
dv/dt  
I = 80 A, V = 24 V, di/dt = 200 A/µs,  
S
DS  
T
= 175 °C  
jmax  
Gate source voltage  
Power dissipation  
V
V
P
±20  
GS  
tot  
300  
W
T = 25 °C  
C
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55... +175  
55/175/56  
°C  
T , T  
j
stg  
1
Semiconductor Group  

SPP80N03 替代型号

型号 品牌 替代类型 描述 数据表
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