生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.7 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 700 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (Abs) (ID): | 80 A |
最大漏极电流 (ID): | 80 A | 最大漏源导通电阻: | 0.0055 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 300 W | 最大脉冲漏极电流 (IDM): | 320 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
STP140NF55 | STMICROELECTRONICS |
功能相似 |
N-channel 55V - 0.0065ヘ - 80A - D2PAK - I2PAK | |
STP80NF55-08 | STMICROELECTRONICS |
功能相似 |
N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/ | |
STP80NF55-06 | STMICROELECTRONICS |
功能相似 |
N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SPP80N06S2L-05 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
SPP80N06S2L-06 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
SPP80N06S2L-07 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
SPP80N06S2L-09 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
SPP80N06S2L-11 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
SPP80N06S2L-11 | ROCHESTER |
获取价格 |
80A, 55V, 0.0147ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, 3 PIN | |
SPP80N06S2L-H5 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
SPP80N08S2-07 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
SPP80N08S2L-07 | INFINEON |
获取价格 |
OptiMOS Power-Transistor | |
SPP80N10L | INFINEON |
获取价格 |
SIPMOS Power-Transistor |