Datasheet > SPP80P06P H

SPP80P06P H

更新时间： 2024-10-02 11:14:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	606K
描述
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

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SPP80P06P H 数据手册

SPP80P06P H

SIPMOS Power-Transistor

Features

P-Channel

Product Summary

• P-Channel

Drain source voltage

-60

0.023

-80

• Enhancement mode

Enhancement mode

• Avalanche rated

Drain-source on-state resistance R

DS(on)

Avalanche rated

Continuous drain current

• dv/dt rated

dv/dt rated

• 175C operating temperature

175°C operating temperature

• Pb-free lead plating; RoHs compliant

• Qualified according to AEC Q101

° Halogen-free according to IEC61249-2-21

Pin 1 PIN 2/4 PIN 3

Type

Package

Lead free

SPP80P06P H

PG-TO220-3 Yes

Maximum Ratings,at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

25 °C,

-80

-64

C =

T = 100 °C

Pulsed drain current

-320

D puls

T = 25 °C

Avalanche energy, single pulse

823

I = -80 A , V = -25 V, R = 25

Avalanche energy, periodic limited by T

jmax

Reverse diode dv/dt

dv/dt

kV/µs

I = -80 A, V = -48 , di/dt = 200 A/µs,

= 175 °C

jmax

Gate source voltage

Power dissipation

±20

340

tot

T = 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55...+175

55/175/56

°C

stg

Current limited by bondwire; with anR_thJC= 0.4 K/W the chip is able to carry I_D= -91A

Rev 1.5 Page 1

2011-09-01

12 3 4 5 6 7...11

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