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SPP80N03S2L-05 PDF预览

SPP80N03S2L-05

更新时间: 2024-11-29 22:12:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 415K
描述
OptiMOS Power-Transistor

SPP80N03S2L-05 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:TO-220AB
包装说明:PLASTIC, TO-220, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.64
其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):325 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):154 W最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SPP80N03S2L-05 数据手册

 浏览型号SPP80N03S2L-05的Datasheet PDF文件第2页浏览型号SPP80N03S2L-05的Datasheet PDF文件第3页浏览型号SPP80N03S2L-05的Datasheet PDF文件第4页浏览型号SPP80N03S2L-05的Datasheet PDF文件第5页浏览型号SPP80N03S2L-05的Datasheet PDF文件第6页浏览型号SPP80N03S2L-05的Datasheet PDF文件第7页 
SPI80N03S2L-05  
SPP80N03S2L-05,SPB80N03S2L-05  
OptiMOS Power-Transistor  
Product Summary  
Feature  
V
R
I
30  
5.2  
80  
V
DS  
N-Channel  
mΩ  
A
DS(on)  
Enhancement mode  
Logic Level  
D
P- TO262 -3-1  
P- TO263 -3-2  
P- TO220 -3-1  
Excellent Gate Charge x R  
DS(on)  
product (FOM)  
Superior thermal resistance  
175°C operating temperature  
Avalanche rated  
dv/dt rated  
Type  
Package  
Ordering Code  
Marking  
2N03L05  
2N03L05  
2N03L05  
SPP80N03S2L-05 P- TO220 -3-1 Q67042-S4033  
SPB80N03S2L-05 P- TO263 -3-2 Q67042-S4032  
SPI80N03S2L-05  
P- TO262 -3-1 Q67042-S4093  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
1)  
A
Continuous drain current  
I
D
T =25°C  
C
80  
80  
320  
Pulsed drain current  
I
D puls  
T =25°C  
C
325  
mJ  
Avalanche energy, single pulse  
E
AS  
I =80 A , V =25V, R =25Ω  
D
DD  
GS  
2)  
16  
6
Repetitive avalanche energy, limited by T  
Reverse diode dv/dt  
E
jmax  
AR  
kV/µs  
dv/dt  
I =80A, V =24V, di/dt=200A/µs, T =175°C  
jmax  
S
DS  
V
Gate source voltage  
Power dissipation  
V
±20  
167  
GS  
W
P
tot  
T =25°C  
C
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55... +175  
55/175/56  
j
stg  
Page 1  
2003-04-24  

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