5秒后页面跳转
SPA20N65C3 PDF预览

SPA20N65C3

更新时间: 2024-11-22 22:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
14页 300K
描述
Cool MOS⑩ Power Transistor

SPA20N65C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:8.42
其他特性:AVALANCHE RATED雪崩能效等级(Eas):690 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:650 V最大漏极电流 (Abs) (ID):20.7 A
最大漏极电流 (ID):20.7 A最大漏源导通电阻:0.19 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):34.5 W最大脉冲漏极电流 (IDM):62.1 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SPA20N65C3 数据手册

 浏览型号SPA20N65C3的Datasheet PDF文件第2页浏览型号SPA20N65C3的Datasheet PDF文件第3页浏览型号SPA20N65C3的Datasheet PDF文件第4页浏览型号SPA20N65C3的Datasheet PDF文件第5页浏览型号SPA20N65C3的Datasheet PDF文件第6页浏览型号SPA20N65C3的Datasheet PDF文件第7页 
SPP20N65C3, SPA20N65C3  
SPI20N65C3  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
V
@ T  
650  
0.19  
20.7  
V
A
DS  
jmax  
R
DS(on)  
I
D
Worldwide best R  
in TO 220  
DS(on)  
P-TO262-3-1  
P-TO220-3-31 P-TO220-3-1  
Ultra low gate charge  
Periodic avalanche rated  
Extreme dv/dt rated  
High peak current capability  
Improved transconductance  
3
2
1
P-TO220-3-31  
Type  
Package  
Ordering Code  
Marking  
20N65C3  
20N65C3  
20N65C3  
SPP20N65C3  
SPA20N65C3  
SPI20N65C3  
P-TO220-3-1 Q67040-S4556  
P-TO220-3-31 Q67040-S4555  
P-TO262-3-1 Q67040-S4560  
Maximum Ratings  
Parameter  
Symbol  
Value  
SPP_I  
Unit  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
20.7  
13.1  
20.7  
C
1)  
T = 100 °C  
13.1  
62.1  
690  
C
Pulsed drain current,  
t
limited by  
T
I
D puls  
E
62.1  
690  
A
mJ  
p
jmax  
Avalanche energy, single pulse  
AS  
I =3.5A, V =50V  
D
DD  
2)  
E
Avalanche energy, repetitive  
t
limited by  
limited by  
T
T
1
1
AR  
AR  
jmax  
I =7A, V =50V  
D
DD  
Avalanche current, repetitive  
t
I
7
7
A
V
AR  
jmax  
AR  
Gate source voltage  
V
V
P
±20  
±20  
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
±
30  
208  
-55...+150  
±
30  
Power dissipation, T = 25°C  
34.5  
W
C
Operating and storage temperature  
T
,
T
°C  
j
stg  
Page 1  
2003-08-15  

SPA20N65C3 替代型号

型号 品牌 替代类型 描述 数据表
IPA65R190C6XKSA1 INFINEON

类似代替

Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
SPP15N60CFD INFINEON

类似代替

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode
STF16N65M5 STMICROELECTRONICS

功能相似

N沟道650 V、0.230 Ohm典型值、12 A MDmesh M5功率MOSFET,

与SPA20N65C3相关器件

型号 品牌 获取价格 描述 数据表
SPA-2118 SIRENZA

获取价格

850 MHz 1 Watt Power Amplifier with Active Bias
SPA2118Z RFMD

获取价格

850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA2118Z-EVB1 RFMD

获取价格

850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA2118ZSQ RFMD

获取价格

850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA2118ZSR RFMD

获取价格

850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA21N50C3 INFINEON

获取价格

Cool MOS⑩ Power Transistor
SPA21N50C3XKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Met
SPA221M04R CDE

获取价格

Solid Polymer Aluminum SMT Capacitors
SPA221M0ER CDE

获取价格

Solid Polymer Aluminum SMT Capacitors
SPA-2318 SIRENZA

获取价格

1700-2200 MHz 1 Watt Power Amp with Active Bias