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SPA-2318 PDF预览

SPA-2318

更新时间: 2024-09-28 03:31:23
品牌 Logo 应用领域
SIRENZA 射频微波
页数 文件大小 规格书
9页 202K
描述
1700-2200 MHz 1 Watt Power Amp with Active Bias

SPA-2318 数据手册

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SPA-2318  
Product Description  
RoHS Compliant  
& Green Package  
Pb  
SPA-2318Z  
1700-2200 MHz 1 Watt Power Amp  
with Active Bias  
Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs  
Heterojunction Bipolar Transistor (HBT) amplifier housed in a  
low-cost surface-mountable plastic package. These HBT  
amplifiers are fabricated using molecular beam epitaxial growth  
technology which produces reliable and consistent performance  
from wafer to wafer and lot to lot.  
Preliminary  
This product is specifically designed for use as a driver amplifier  
for infrastructure equipment in the 1960 and 2140 MHz bands. Its  
high linearity makes it an ideal choice for multi-carrier and digital  
applications.  
Product Features  
• Now available in Lead Free, RoHS  
Compliant, & Green Packaging  
• High Linearity Performance:  
+21 dBm IS-95 Channel Pwr at -55 dBc ACP  
+20.7 dBm W-CDMA Channel Pwr at -50dBc ACP  
+47 dBm Typ. OIP3  
The matte tin finish on Sirenza’s lead-free package utilizes a post  
annealing process to mitigate tin whisker formation and is RoHS  
compliant per EU Directive 2002/95. This package is also manu-  
factured with green molding compounds that contain no antimony  
trioxide nor halogenated fire retardants.  
• On-chip Active Bias Control  
VC1  
• High Gain: 24 dB Typ. at 1960 MHz  
• Patented High Reliability GaAsHBT Technology  
• Surface-Mountable Plastic Package  
Active  
Bias  
VBIAS  
RFOUT/  
VC2  
Applications  
RFIN  
• W-CDMA Systems  
• PCS Systems  
VPC2  
• Multi-Carrier Applications  
Parameters: Test Conditions:  
Symbol  
Units  
MHz  
dBm  
Min.  
Typ.  
Max.  
Z0 = 50 Ohms Temp = 25ºC, Vcc = 5.0V  
f0  
Frequency of Operation  
1700  
2200  
f = 1960 MHz  
f = 2140 MHz  
29.5  
29.5  
P1dB  
Output Power at 1dB Compression[1]  
Adjacent Channel Power [1]  
IS-95 @ POUT = 21.0 dBm  
W-CDMA @ POUT = 20.7 dBm  
ACP  
S21  
f = 1960 MHz  
f = 2140 MHz  
dBc  
dB  
-55.0  
-50.0  
-47.0  
25.0  
f = 1960 MHz  
f = 2140 MHz  
24.0  
23.5  
[1,2]  
Small Signal Gain  
22.5  
f = 1960 MHz  
f = 2140 MHz  
-
-
1.6:1  
1.6:1  
[1,2]  
VSWR Input VSWR  
[2]  
Output Third Order Intercept Point  
Power out per tone = +14dBm  
f = 1960 MHz  
f = 2140 MHz  
46.5  
47.0  
OIP3  
NF  
dBm  
dB  
f = 1960 MHz  
f = 2140 MHz  
5.5  
5.5  
[1,2]  
Noise Figure  
Ibias = 10 mA  
Ic1 = 70 mA  
Ic2 = 320 mA  
[1,2]  
ICC  
Device Current  
mA  
360  
4.75  
400  
425  
5.25  
[1,2]  
5.0  
31  
VCC  
Device Voltage  
V
Rth j-l  
Thermal Resistance (junction - lead), TL = 85ºC  
ºC/W  
[1] OptimalACP tune  
[2] Optimal IP3 tune  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights  
reserved.  
303 S. Technology Court, Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-101432 Rev H  

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