SPA-2318
Product Description
RoHS Compliant
& Green Package
Pb
SPA-2318Z
1700-2200 MHz 1 Watt Power Amp
with Active Bias
Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in a
low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial growth
technology which produces reliable and consistent performance
from wafer to wafer and lot to lot.
Preliminary
This product is specifically designed for use as a driver amplifier
for infrastructure equipment in the 1960 and 2140 MHz bands. Its
high linearity makes it an ideal choice for multi-carrier and digital
applications.
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Linearity Performance:
+21 dBm IS-95 Channel Pwr at -55 dBc ACP
+20.7 dBm W-CDMA Channel Pwr at -50dBc ACP
+47 dBm Typ. OIP3
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also manu-
factured with green molding compounds that contain no antimony
trioxide nor halogenated fire retardants.
• On-chip Active Bias Control
VC1
• High Gain: 24 dB Typ. at 1960 MHz
• Patented High Reliability GaAsHBT Technology
• Surface-Mountable Plastic Package
Active
Bias
VBIAS
RFOUT/
VC2
Applications
RFIN
• W-CDMA Systems
• PCS Systems
VPC2
• Multi-Carrier Applications
Parameters: Test Conditions:
Symbol
Units
MHz
dBm
Min.
Typ.
Max.
Z0 = 50 Ohms Temp = 25ºC, Vcc = 5.0V
f0
Frequency of Operation
1700
2200
f = 1960 MHz
f = 2140 MHz
29.5
29.5
P1dB
Output Power at 1dB Compression[1]
Adjacent Channel Power [1]
IS-95 @ POUT = 21.0 dBm
W-CDMA @ POUT = 20.7 dBm
ACP
S21
f = 1960 MHz
f = 2140 MHz
dBc
dB
-55.0
-50.0
-47.0
25.0
f = 1960 MHz
f = 2140 MHz
24.0
23.5
[1,2]
Small Signal Gain
22.5
f = 1960 MHz
f = 2140 MHz
-
-
1.6:1
1.6:1
[1,2]
VSWR Input VSWR
[2]
Output Third Order Intercept Point
Power out per tone = +14dBm
f = 1960 MHz
f = 2140 MHz
46.5
47.0
OIP3
NF
dBm
dB
f = 1960 MHz
f = 2140 MHz
5.5
5.5
[1,2]
Noise Figure
Ibias = 10 mA
Ic1 = 70 mA
Ic2 = 320 mA
[1,2]
ICC
Device Current
mA
360
4.75
400
425
5.25
[1,2]
5.0
31
VCC
Device Voltage
V
Rth j-l
Thermal Resistance (junction - lead), TL = 85ºC
ºC/W
[1] OptimalACP tune
[2] Optimal IP3 tune
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights
reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101432 Rev H