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SPA2318ZSQ PDF预览

SPA2318ZSQ

更新时间： 2024-09-29 01:03:55
品牌 Logo 应用领域
威讯 - RFMD 射频微波
页数 文件大小 规格书
8页 646K
描述
1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS

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SPA2318ZSQ 数据手册

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SPA2318ZLow  
Noise, High  
Gain SiGe HBT  
SPA2318Z  
1700MHz to 2200MHz 1 WATT POWER AMP  
WITH ACTIVE BIAS  
Package: Exposed Pad SOIC-8  
Product Description  
Features  
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)  
amplifier housed in a low-cost surface-mountable plastic package. These HBT  
amplifiers are fabricated using molecular beam epitaxial growth technology which  
produces reliable and consistent performance from wafer to wafer and lot to lot.  
This product is specifically designed for use as a driver amplifier for infrastructure  
equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an  
ideal choice for multi-carrier and digital applications. The matte tin finish on the  
lead-free package utilizes a post annealing process to mitigate tin whisker forma-  
tion and is RoHS compliant per EU Directive 2002/95. This  
High Linearity Performance:  
+21dBm IS-95 Channel  
Power at -55dBc ACP;  
+20.7dBm WCDMA Channel  
Power at -50dBc ACP;  
+47dBm Typ. OIP  
3
On-Chip Active Bias Control  
High Gain: 24dB Typ. at  
1960MHz  
Optimum Technology  
package is also manufactured with green molding compounds  
that contain no antimony trioxide or halogenated fire retar-  
Matching® Applied  
Patented High Reliability  
GaAs HBT Technology  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
dants.  
Surface-Mountable Plastic  
Package  
VC1  
Applications  
Active  
Bias  
VBIAS  
WCDMA Systems  
PCS Systems  
RFOUT/  
VC2  
GaAs pHEMT  
Si CMOS  
RFIN  
Multi-Carrier Applications  
Si BJT  
GaN HEMT  
RF MEMS  
VPC2  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
1700  
Max.  
2200  
Frequency of Operation  
MHz  
dBm  
[1]  
29.5  
1960MHz  
2140MHz  
Output Power at 1dB Compression  
29.5  
-55.0  
dBm  
dBc  
[1]  
1960MHz, IS-95 at P =21.0dBm, WCDMA at  
Adjacent Channel Power  
OUT  
P
=20.7dBm  
OUT  
-50.0  
24.0  
-47.0  
24.5  
dBc  
dB  
2140MHz  
1960MHz  
[1,2]  
Small Signal Gain  
21.0  
23.5  
1.6:1  
dB  
2140MHz  
1960MHz  
[1,2]  
Input VSWR  
1.6:1  
46.5  
2140MHz  
[2]  
dBm  
1960MHz, Power out per tone=+14dBm  
Output Third Order Intercept Point  
47.0  
5.5  
dBm  
dB  
2140MHz  
1960MHz  
[1,2]  
Noise Figure  
5.5  
dB  
2140MHz  
[1,2]  
360  
400  
425  
mA  
I
=10mA, I =70mA, I =320mA  
BIAS C1 C2  
Device Current  
[1,2]  
4.75  
5.0  
31  
5.25  
V
Device Voltage  
Thermal Resistance  
(Junction - Lead)  
°C/W  
T =85°C  
L
Test Conditions: Z =50Temp=25°C  
V
=5.0V [1] Optimal ACP tune [2] Optimal IP tune  
0
C
C
3
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS121024  
1 of 8  
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