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SPA2118ZSR PDF预览

SPA2118ZSR

更新时间: 2024-09-29 01:09:19
品牌 Logo 应用领域
威讯 - RFMD 放大器射频微波功率放大器
页数 文件大小 规格书
7页 534K
描述
850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS

SPA2118ZSR 数据手册

 浏览型号SPA2118ZSR的Datasheet PDF文件第2页浏览型号SPA2118ZSR的Datasheet PDF文件第3页浏览型号SPA2118ZSR的Datasheet PDF文件第4页浏览型号SPA2118ZSR的Datasheet PDF文件第5页浏览型号SPA2118ZSR的Datasheet PDF文件第6页浏览型号SPA2118ZSR的Datasheet PDF文件第7页 
SPA2118Z  
850MHz  
1
Watt Power  
Amplifier with  
Active Bias  
SPA2118Z  
850MHz 1 WATT POWER AMPLIFIER WITH  
ACTIVE BIAS  
Package: Exposed Pad SOIC-8  
Product Description  
Features  
RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Tran-  
sistor (HBT) amplifier housed in a low-cost surface-mountable plastic  
package. These HBT amplifiers are fabricated using molecular beam epi-  
taxial growth technology which produces reliable and consistent perfor-  
mance from wafer to wafer and lot to lot. This product is specifically  
designed for use as a driver amplifier for infrastructure equipment in the  
850MHz band. Its high linearity makes it an ideal choice for multi-carrier  
and digital applications.  
High Linearity Performance  
+20.7dBm, IS-95 CDMA  
Channel Power at -55dBc  
ACP  
+47dBm Typ. OIP3  
High Gain: 33dB Typ.  
On-Chip Active Bias Control  
Optimum Technology  
Matching® Applied  
Patented high Reliability GaAs  
HBT Technology  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
VC1  
Surface-Mountable Plastic  
Package  
Active  
Bias  
VBIAS  
RFOUT/  
VC2  
Applications  
IS-95 CDMA Systems  
RFIN  
Multi-Carrier Applications  
AMPS, ISM Applications  
GaAs pHEMT  
Si CMOS  
VPC2  
Si BJT  
GaN HEMT  
RF MEMS  
Specification  
Parameter  
Unit  
Condition  
Min.  
810  
Typ.  
900  
29.0  
-55.0  
Max.  
960  
Frequency of Operation  
Output Power at 1dB Compression  
Adjacent Channel Power  
MHz  
dBm  
dBc  
-52.0  
34.5  
IS-95 at 880MHz, ±885KHz offset,  
=20.7dBm  
P
OUT  
Small Signal Gain  
Input VSWR  
Output Third Order Intercept Point  
Noise Figure  
31.5  
33.0  
1.5:1  
47.0  
5.0  
dB  
880MHz  
Power out per tone=+14dBm  
=10mA, I =70mA, I =320mA  
dBm  
dB  
mA  
Device Current  
360  
400  
425  
I
BIAS  
C1  
C2  
Device Voltage  
Thermal Resistance  
(Junction - Lead)  
4.75  
5.0  
31  
5.25  
V
°C/W  
T =85°C  
L
Test Conditions: Z =50Temp=25°C  
V
=5.0V  
0
CC  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS121024  
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