5秒后页面跳转
捷配首页

Datasheet > SPA2318Z-EVB1
SPA2318Z-EVB1 PDF预览

SPA2318Z-EVB1

更新时间： 2024-11-16 01:03:55
品牌 Logo 应用领域
威讯 - RFMD /
页数 文件大小 规格书
8页 646K
描述
1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS

阅读下载

中文翻译

获取价格

SPA2318Z-EVB1 数据手册

 浏览型号SPA2318Z-EVB1的Datasheet PDF文件第2页浏览型号SPA2318Z-EVB1的Datasheet PDF文件第3页浏览型号SPA2318Z-EVB1的Datasheet PDF文件第4页浏览型号SPA2318Z-EVB1的Datasheet PDF文件第5页浏览型号SPA2318Z-EVB1的Datasheet PDF文件第6页浏览型号SPA2318Z-EVB1的Datasheet PDF文件第7页 
SPA2318ZLow  
Noise, High  
Gain SiGe HBT  
SPA2318Z  
1700MHz to 2200MHz 1 WATT POWER AMP  
WITH ACTIVE BIAS  
Package: Exposed Pad SOIC-8  
Product Description  
Features  
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)  
amplifier housed in a low-cost surface-mountable plastic package. These HBT  
amplifiers are fabricated using molecular beam epitaxial growth technology which  
produces reliable and consistent performance from wafer to wafer and lot to lot.  
This product is specifically designed for use as a driver amplifier for infrastructure  
equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an  
ideal choice for multi-carrier and digital applications. The matte tin finish on the  
lead-free package utilizes a post annealing process to mitigate tin whisker forma-  
tion and is RoHS compliant per EU Directive 2002/95. This  
High Linearity Performance:  
+21dBm IS-95 Channel  
Power at -55dBc ACP;  
+20.7dBm WCDMA Channel  
Power at -50dBc ACP;  
+47dBm Typ. OIP  
3
On-Chip Active Bias Control  
High Gain: 24dB Typ. at  
1960MHz  
Optimum Technology  
package is also manufactured with green molding compounds  
that contain no antimony trioxide or halogenated fire retar-  
Matching® Applied  
Patented High Reliability  
GaAs HBT Technology  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
dants.  
Surface-Mountable Plastic  
Package  
VC1  
Applications  
Active  
Bias  
VBIAS  
WCDMA Systems  
PCS Systems  
RFOUT/  
VC2  
GaAs pHEMT  
Si CMOS  
RFIN  
Multi-Carrier Applications  
Si BJT  
GaN HEMT  
RF MEMS  
VPC2  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
1700  
Max.  
2200  
Frequency of Operation  
MHz  
dBm  
[1]  
29.5  
1960MHz  
2140MHz  
Output Power at 1dB Compression  
29.5  
-55.0  
dBm  
dBc  
[1]  
1960MHz, IS-95 at P =21.0dBm, WCDMA at  
Adjacent Channel Power  
OUT  
P
=20.7dBm  
OUT  
-50.0  
24.0  
-47.0  
24.5  
dBc  
dB  
2140MHz  
1960MHz  
[1,2]  
Small Signal Gain  
21.0  
23.5  
1.6:1  
dB  
2140MHz  
1960MHz  
[1,2]  
Input VSWR  
1.6:1  
46.5  
2140MHz  
[2]  
dBm  
1960MHz, Power out per tone=+14dBm  
Output Third Order Intercept Point  
47.0  
5.5  
dBm  
dB  
2140MHz  
1960MHz  
[1,2]  
Noise Figure  
5.5  
dB  
2140MHz  
[1,2]  
360  
400  
425  
mA  
I
=10mA, I =70mA, I =320mA  
BIAS C1 C2  
Device Current  
[1,2]  
4.75  
5.0  
31  
5.25  
V
Device Voltage  
Thermal Resistance  
(Junction - Lead)  
°C/W  
T =85°C  
L
Test Conditions: Z =50Temp=25°C  
V
=5.0V [1] Optimal ACP tune [2] Optimal IP tune  
0
C
C
3
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS121024  
1 of 8  
12345678

中文翻译

下载PDF

与SPA2318Z-EVB1相关器件

型号 品牌 获取价格 描述 数据表
SPA2318Z-EVB2 RFMD

获取价格

 		1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS
SPA2318ZSQ RFMD

获取价格

 		1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS
SPA2318ZSR RFMD

获取价格

 		1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS
SPA2410LR5H KNOWLES

获取价格

 		Digital to Analog Converter (DAC) PCB, Mic-On-Flex Assemblies
SPA25 MICROSEMI

获取价格

 		25 amp single phase bridge rectifiers
SPA25_07 MICROSEMI

获取价格

 		25 Amp Single Phase Bridge Rectifiers
SPA-2501-25 PDI

获取价格

 		SURFACE MOUNT 2-WAY SPLITTER
SPA2505G RECTRON

获取价格

 		SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE 600 Volts CURRENT 25 Ampere
SPA251 RECTRON

获取价格

 		General Purpose Plastic Rectifiers VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.5 Amperes
SPA251-F RECTRON

获取价格

 		Rectifier Diode,

与SPA2318Z-EVB1相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证