Datasheet > SPA-2118

SPA-2118

更新时间： 2024-11-15 03:31:23

品牌	Logo	应用领域
SIRENZA		放大器射频微波功率放大器
页数	文件大小	规格书
6页	215K
描述
850 MHz 1 Watt Power Amplifier with Active Bias

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SPA-2118 数据手册

Product Description

SPA-2118

Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs

Heterojunction Bipolar Transistor (HBT) amplifier housed in

a low-cost surface-mountable plastic package. These HBT

amplifiers are fabricated using molecular beam epitaxial

growth technology which produces reliable and consistent

performance from wafer to wafer and lot to lot.

850 MHz 1 Watt Power Amplifier

with Active Bias

This product is specifically designed for use as a driver

amplifier for infrastructure equipment in the 850 MHz band.

Its high linearity makes it an ideal choice for multi-carrier and

digital applications.

Product Features

•High Linearity Performance:

+20.7 dBm IS-95 CDMA Channel Power

at -55 dBc ACP

+47 dBm typ. OIP3

VC1

• On-chip Active Bias Control

Active

VBIAS

•High Gain: 33 dB Typ.

Bias

RFOUT/

•Patented High Reliability GaAsHBT Technology

• Surface-Mountable Plastic Package

VC2

RFIN

VPC2

Applications

• IS-95 CDMA Systems

• Multi-Carrier Applications

• AMPS, ISM Applications

Parameters: Test Conditions:

Symbol

Units

Min.

Typ.

Max.

Z₀= 50 Ohms Temp = 25ºC, V_CC= 5.0V

f₀

Frequency of Operation

MHz

dBm

810

900

960

Output Power at 1dB Compression

29.0

P_1dB

Adjacent Channel Power

ACP

dBc

-55.0

-52.0

34.5

IS-95 @880 MHz, ±885 KHz offset, P_OUT=20.7 dBm

Small Signal Gain, 880 MHz

Input VSWR

31.5

33.0

S₂₁

VSWR

1.5:1

Output Third Order Intercept Point

Power out per tone = +14 dBm

OIP₃

dBm

47.0

5.0

Noise Figure

Device Current

I_CC

360

400

425

_BIAS= 10mA, I_C1= 70mA, I_C2= 320mA

V_CC

Device Voltage

4.75

5.0

5.25

R_{th j-l}

Thermal Resistance (junction - lead), T_L= 85ºC

ºC/W

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.

Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are

subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not

authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-102012 Rev F

12 3 4 5 6

中文翻译

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与SPA-2118相关器件

型号	品牌	获取价格	描述	数据表
SPA2118Z	RFMD	获取价格	850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA2118Z-EVB1	RFMD	获取价格	850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA2118ZSQ	RFMD	获取价格	850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA2118ZSR	RFMD	获取价格	850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS
SPA21N50C3	INFINEON	获取价格	Cool MOS⑩ Power Transistor
SPA21N50C3XKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 21A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Met
SPA221M04R	CDE	获取价格	Solid Polymer Aluminum SMT Capacitors
SPA221M0ER	CDE	获取价格	Solid Polymer Aluminum SMT Capacitors
SPA-2318	SIRENZA	获取价格	1700-2200 MHz 1 Watt Power Amp with Active Bias
SPA-2318	STANFORD	获取价格	2150 MHz 1 Watt Power Amplifier with Active Bias

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