SP8K2

更新时间： 2024-11-25 03:43:39

品牌	Logo	应用领域
罗姆 - ROHM		开关
页数	文件大小	规格书
4页	61K
描述
Switching (30V, 6.0A)

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中文翻译

获取价格

数据手册
替代型号

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SP8K2 数据手册

SP8K2

Transistors

Switching (30V, 6.0A)

SP8K2

zExternal dimensions (Unit : mm)

zFeatures

1) Low on-resistance.

SOP8

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (SOP8).

5.0±0.2

zApplication

Power switching, DC / DC converter.

0.2±0.1

0.4±0.1

zStructure

1.27

0.1

Silicon N-channel

MOS FET

Each lead has same dimensions

zEquivalent circuit

zAbsolute maximum ratings (Ta=25°C)

It is the same ratings for the Tr. 1 and Tr. 2.

(8)

(7)

(6)

(5)

(8) (7) (6) (5)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

±6.0

±24

Continuous

Pulsed

Drain current

(1) (2) (3) (4)

I_DP

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

Source current

(Body diode)

Continuous

Pulsed

I_S

1.6

I_SP

6.4

Total power dissipation

Channel temperature

P_D

°C

(1)

(2)

(3)

(4)

Tch

Tstg

150

Storage temperature

1 Pw 10µs, Duty cycle 1%

−55 to +150

1 ESD PROTECTION DIODE

2 BODY DIODE

2 MOUNTED ON A CERAMIC BOARD.

A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

zThermal resistance (Ta=25°C)

Parameter

Symbol

Rth (ch-a)

Limits

62.5

Unit

Channel to ambient

°C / W

MOUNTED ON A CERAMIC BOARD.

1/3

12 3 4

中文翻译

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SP8K2 替代型号

型号	品牌	替代类型	描述	数据表
SP8K2FU6TB	ROHM	类似代替	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
SP8K2TB	ROHM	功能相似	Power Field-Effect Transistor, 6A I(D), 30V, 0.047ohm, 2-Element, N-Channel, Silicon, Meta

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