Datasheet > SMG5402_15

SMG5402_15

更新时间： 2024-11-30 01:23:19

品牌	Logo	应用领域
SECOS		/
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描述
N-Channel Enhancement Mode MOSFET

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SMG5402_15 数据手册

SMG5402

4A , 30V , R_DS(ON)55 mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

SC-59

DESCRIPTION

The SMG5406 utilized advanced processing

techniques to achieve the lowest possible on-resistance,

extremely efficient and cost-effectiveness device. The

SMG5406 is universally used for all commercial-industrial

applications.

Top View

C B

FEATURES

ꢀ

Simple Drive Requirement

Small Package Outline

ꢀ

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.10 REF.

0.40 REF.

Max.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

MARKING

5402

0.10

0.20

0.45

0.55

1.70

0.35

2.30

0.50

0.85

1.15

PACKAGE INFORMATION

TOP VIEW

Package

MPQ

Leader Size

SC-59

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

T_A=25°C

T_A=70°C

Continuous Drain Current ³, V_GS@4.5V

I_D

Pulsed Drain Current ^1,2

I_DM

P _D

Power Dissipation

T_A=25°C

1.38

0.01

-55~150

Linear Derating Factor

W / °C

°C

Operating Junction and Storage Temperature Range

T_j, T_stg

Thermal Resistance Rating

Maximum Junction to Ambient ³

R_θJA

°C / W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

26-Oct-2012 Rev. A

Page 1 of 4

12 3 4

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