Datasheet > SMG6401

SMG6401

更新时间： 2024-11-09 09:19:07

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	459K
描述
P-Channel Enhancement Mode Power Mos.FET

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中文翻译

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技术参数
数据手册

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SMG6401 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

SMG6401 数据手册

SMG6401

-4.3A, -12V,RDS(ON) 50m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

Description

SC-59

Min

The SMG6401 provide the designer with the best

combination of fast switching, low on-resistance

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

and cost-effectiveness.

The SMG6401 is universally preferred for all commercial

industrial surface mount application and suited for low

voltage applications such as DC/DC converters.

Top View

Features

* Ultra Low RDS(ON)

* 1.8V Gate Rated

* Fast switching speed

Drain

Gate

All Dimension in mm

Applications

Source

* Power Management in Notebook Computer

* Protable Equipment

* Battery Powered System

Marking : 6401

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

-12

±8

Gate-Source Voltage

VGS

Continuous Drain Current³

Continuous Drain Current ³

Pulsed Drain Current ^1,2

Total Power Dissipation

ID@TA=25 ^oC

-4.3

-3.4

-12

ID@TA=70 ^o

IDM

PD@TA=25

^oC

1.38

0.01

W/^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient ³

^oC /W

Rthj-a

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

中文翻译

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