Datasheet > SMG702

SMG702

更新时间： 2024-01-06 00:13:47

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
3页	345K
描述
N-Channel Enhancement Mode Power Mos.FET

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SMG702 数据手册

SMG702

500mA, 60V,RDS(ON) 4.5

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SC-59

Min

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

Description

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

The SMG702 is universally used for all commercial

industrial surface mount application.

Top View

Marking : 702

Drain

Gate

All Dimension in mm

Source

Absolute Maximum Ratings at TA = 25 ^oC

Parameter

Symbol

VDS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

±40

500

800

VGS

Continuous

Non-repetitive (tp 50us)

≦

VGSM

Continuous Drain Current

(Pulse width 300us, dutycycle 2%)

≦

Pulsed Drain Current

≦

IDM

Total Power Dissipation

225

W/ ^oC

^oC

RthJA

556

Thermal Resistance,Junction-to-Ambient

Operating Junction and Storage Temperature Range

-55~+150

Tj, Tstg

Electrical Characteristics( Tj = 25^oC Unless otherwise specified)

Parameter

Symbol

Max.

Min.

Typ.

Unit

Test Condition

V^GS=0V, ID=250uA

V^DS=2.5V,ID =0.25mA

Drain-Source Breakdown Voltage

Gat Thershold Voltage

BV^DSS

VGS(th)

2.5

V^GS= 20V,

VDS=0

Gate-Source Leakage Current

Zero Gate Voltage Drain Current

On-State Drain Current

100

IGSS

IDSS

VDS=60V,VGS=0

V^DS=7.5V,VGS=10V

500

ID(ON)

I^D=50mA,V^GS=5V

StaticDrain-Source On-Resistance

RDS(ON)

I^D=500mA, V^GS=10V

4.5

Input Capacitance

Ciss

Coss

Crss

VGS=0V

V^DS=25V

f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Forward Transconductance

V^DS>2 VDS(ON),

Gfs

I_D=200mA

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

12 3

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