SMG702
500mA, 60V,RDS(ON) 4.5
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SC-59
Min
A
Dim
A
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
Description
L
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
The SMG702 is universally used for all commercial
industrial surface mount application.
3
B
S
B
Top View
2
1
C
D
D
-
Marking : 702
D
G
H
G
J
J
C
G
K
K
H
L
Drain
S
S
Gate
All Dimension in mm
Source
Absolute Maximum Ratings at TA = 25 oC
Parameter
Symbol
VDS
Ratings
Unit
V
Drain-Source Voltage
Gate-Source Voltage
60
±20
±40
500
800
VGS
V
-
-
Continuous
Non-repetitive (tp 50us)
V
≦
VGSM
Continuous Drain Current
(Pulse width 300us, dutycycle 2%)
mA
mA
mW
ID
≦
Pulsed Drain Current
≦
IDM
PD
Total Power Dissipation
225
W/ oC
oC
RthJA
556
Thermal Resistance,Junction-to-Ambient
Operating Junction and Storage Temperature Range
-55~+150
Tj, Tstg
Electrical Characteristics( Tj = 25oC Unless otherwise specified)
Parameter
Symbol
Max.
Min.
Typ.
Unit
V
Test Condition
VGS=0V, ID=250uA
VDS=2.5V,ID =0.25mA
_
_
60
Drain-Source Breakdown Voltage
Gat Thershold Voltage
BVDSS
_
V
1
_
VGS(th)
2.5
_
_
±
VGS= 20V,
nA
uA
VDS=0
±
Gate-Source Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
100
IGSS
IDSS
_
VDS=60V,VGS=0
1
_
_
_
VDS=7.5V,VGS=10V
mA
500
_
ID(ON)
ID =50mA,VGS=5V
5
StaticDrain-Source On-Resistance
Ω
RDS(ON)
_
_
_
_
ID =500mA, VGS=10V
4.5
Input Capacitance
Ciss
Coss
Crss
50
25
VGS=0V
VDS=25V
f=1.0MHz
_
_
_
_
pF
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
5
_
_
mS
VDS>2 VDS(ON),
80
Gfs
ID=200mA
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3