Datasheet > SMG702K

SMG702K

更新时间： 2024-09-29 06:12:39

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	587K
描述
N-Channel Enhancement Mode Power Mos.FET

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SMG702K 数据手册

SMG702K

640mA, 60V,RDS(ON) 2

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

A suffix of "-C" specifies halogen & lead-free

Description

SC-59

Min

The SMG702K utilized advanced processing techniques

to achieve the lowest possible on-resistance,

extremely efficient and cost-effectiveness device.

The SMG702K is universally used for all

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

Top View

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

commercial-industrial applications

Features

Simple Drive Requirement

RoHS Compliant Product

Small Package Outline

All Dimension in mm

Drain

Gate

Source

Marking : 702E

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

f20

640

500

950

1.38

Unit

Gate-Source Voltage

V_GS

Continuous Drain Current³, V_GS@10V

Pulsed Drain Current^1,2

I_D@TA=25к

I_D@TA=70к

I_DM

P_D@TA=25к

Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

0.01

-55 ~ +150

W/ć

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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