Datasheet > SMGS11

SMGS11

更新时间： 2023-12-06 20:11:30

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描述
GaAs Schottky Diodes

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SMGS11 数据手册

SMGS11

GaAs Schottky Diode

Features

Rev. V1



Small Footprint, only 50 x 30 mils.

Very Low Parasitic Package Inductance, Series

Resistance, and Low Package Capacitance

RoHS* Compliant



Description

The SMGS11 is a GaAs Schottky diode in a molded

plastic DFN package. It is designed for broadband

detector and single diode mixer. It is in single

configuration. It has a high cutoff frequency and can

be used beyond 26.5 GHz.

Case 0503 - Molded Plastic DFN Package

Electrical Specifications: T_A= +25°C

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Forward Voltage (V_F)

I_R= 1 mA

620

—

760

V_R= 0 V, 1 MHz

V = 0 V, >4 GHz

0.10

0.08

0.13

0.10

Total Capacitance (C_T)

—

Series Resistance (R_S)

Video Resistance (R_V)

I_F= 5 mA

I_F= 40 µA

—

1250

-57

—

Tangential Signal Sensitivity (T_SS

Voltage Sensitivity (y)

)

NF -3 dB, 10 GHz

dBm

P_IN= -30 dBm, Video BW = 500 KHz, 10 GHz mV/mW

8000

Absolute Maximum Ratings

Parameter

Input Power

Absolute Maximum

20 dBm

Handling Procedures

Please observe the following precautions to avoid

damage:

Reverse Voltage

Forward Current

Junction Temperature

Storage Temperature

5 V

Static Sensitivity

20 mA

These electronic devices are sensitive to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these (HBM) Class 0

devices.

+175°C

-65°C to +150°C

+260°C, peak for 5 sec,

per JEDEC J-STD-20C

Solder Temperature

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0014105

12 3

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