Datasheet > SMG6402

SMG6402

更新时间： 2024-11-19 09:19:07

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	448K
描述
P-Channel Enhancement Mode Power Mos.FET

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技术参数
数据手册

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SMG6402 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

SMG6402 数据手册

SMG6402

-4.2A, -20V,RDS(ON) 65m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

Description

SC-59

Min

Dim

Max

3.10

1.60

1.30

0.50

2.10

0.10

0.26

0.60

1.15

2.80

The SMG6402 provide the designer with the best

combination of fast switching, low on-resistance

2.70

1.40

1.00

0.35

1.70

0.00

0.10

0.20

0.85

2.40

and cost-effectiveness.

Top View

The SMG6402 is universally preferred for all commercial

industrial surface mount application and suited for low

voltage applications such as DC/DC converters.

Features

* Ultra low RDS(ON)

* Fast switching

Drain

Gate

All Dimension in mm

Applications

Source

* Power Management in Notebook Computer

* Protable Equipment

* Battery Powered System

Marking : 6402

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

-20

±12

-4.2

-3.4

-10

Gate-Source Voltage

VGS

ID@TA=25 ^o

Continuous Drain Current

Continuous Drain Current ³

^oC

ID@TA=70

IDM

Pulsed Drain Current

PD@TA=25

^oC

Total Power Dissipation

1.38

0.01

W/^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient ³

C /W

Rthj-a

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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