Datasheet > SMG5403_15

SMG5403_15

更新时间： 2024-11-30 01:23:23

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	370K
描述
P-Channel Enhancement Mode MOSFET

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SMG5403_15 数据手册

SMG5403

-2.6A , -30V , R_DS(ON)115 mΩ

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SC-59

The SMG5403 uses advanced trench technology to

provide excellent on-resistance with low gate change.

The device is suitable for use as a load switch or in PWM

applications.

Top View

C B

FEATURES

ꢀ

Lower Gate Threshold Voltage

Small Package Outline

ꢀ

Millimeter

Min. Max.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

MARKING

5403

0.10

0.20

0.45

0.55

1.70

0.35

2.30

0.50

0.85

1.15

PACKAGE INFORMATION

Package

MPQ

Leader Size

SC-59

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

T_A=25°C

T_A=70°C

-2.6

Continuous Drain Current ³

I_D

-2.2

Pulsed Drain Current ¹

Power Dissipation

I_DM

P _D

-10

T_A=25°C

1.38

Linear Derating Factor

0.01

W / °C

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~150

Thermal Resistance Rating

Maximum Junction to Ambient ³

R_θJA

°C / W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

17-Sep-2012 Rev. A

Page 1 of 4

12 3 4

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