Datasheet > SMG5406

SMG5406

更新时间： 2024-10-01 09:19:07

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描述
3.6A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET

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SMG5406 数据手册

SMG5406

3.6A , 30V , R_DS(ON)65 mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

SC-59

DESCRIPTION

The SMG5406 utilized advanced processing

techniques to achieve the lowest possible on-resistance,

extremely efficient and cost-effectiveness device. The

SMG5406 is universally used for all commercial-industrial

applications.

Top View

C B

FEATURES

ꢀ

Simple Drive Requirement

Small Package Outline

ꢀ

Millimeter

Min. Max.

Millimeter

REF.

Min.

0.10 REF.

0.40 REF.

Max.

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

MARKING

5406

0.10

0.20

0.45

0.55

1.70

0.35

2.30

0.50

0.85

1.15

PACKAGE INFORMATION

TOP VIEW

Package

MPQ

Leader Size

SC-59

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_A=25°C

T_A=70°C

3.6

Continuous Drain Current ², V_GS@10V

I_D

2.8

Pulsed Drain Current ¹

Power Dissipation

I_DM

P _D

T_A=25°C

1.38

0.01

-55~150

Linear Derating Factor

W / °C

°C

Operating Junction and Storage Temperature Range

T_j, T_stg

Thermal Resistance Rating

Maximum Junction to Ambient ²

R_θJA

°C / W

Notes:

1. Pulse width limited by Max. junction temperature.

2. Surface mounted on 1 in²copper pad of FR4 board; 270℃/W when mounted on Min. copper pad.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Aug-2011 Rev. A

Page 1 of 4

12 3 4

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