Datasheet > SMG5409

SMG5409

更新时间： 2024-10-01 12:20:39

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描述
-2.6A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET

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SMG5409 数据手册

SMG5409

-2.6A , -30V , R_DS(ON)120 mΩ

P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

SC-59

DESCRIPTION

The SMG5409 provide the designer with best combination

of fast switching, low on-resistance and cost-effectiveness.

The SMG5409 is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Top View

C B

FEATURES

ꢀ

Simple Drive Requirement

Small Package Outline

ꢀ

Millimeter

Min. Max.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

MARKING

5409

2.70

2.25

1.30

1.00

3.10

3.00

1.70

1.40

0.10

0.20

0.45

0.55

1.70

0.35

2.30

0.50

0.85

1.15

PACKAGE INFORMATION

TOP VIEW

Package

MPQ

Leader Size

SC-59

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

-30

±20

-2.6

-2

V_GS

T_A=25°C

T_A=70°C

Continuous Drain Current ²

I_D

Pulsed Drain Current ¹

Power Dissipation

I_DM

P _D

-12

T_A=25°C

1.38

0.01

Linear Derating Factor

W / °C

°C

Operating Junction and Storage Temperature Range

T_j, T_stg

-55~150

Thermal Resistance Rating

Maximum Junction to Ambient ²

R_θJA

°C / W

Notes:

1. Pulse width limited by Max. junction temperature.

2. Surface mounted on 1 in²copper pad of FR4 board; 270℃/W when mounted on Min. copper pad.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Aug-2011 Rev. A

Page 1 of 4

12 3 4

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