Datasheet > SLF13N50U

SLF13N50U

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
7页	344K
描述
TO-220F

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SLF13N50U 数据手册

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SLP13N50U / SLF13N50U

500V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Maple semi‘s

advanced planar stripe DMOS technology.

- 13A, 500V, R_{DS(on) typ.}= 0.40Ω@V_GS= 10 V

- Low gate charge ( typical 35 nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP13N50U

SLF13N50U

Units

Drain-Source Voltage

500

V_DSS

Drain Current

- Continuous (T_C= 25℃)

7.8

13 *

7.8 *

52 *

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

550

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

18.5

4.5

V/ns

dv/dt

185

41.7

0.33

P_D

- Derate above 25℃

1.47

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

300

Maximum lead temperature for soldering purposes,

T_L

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

SLP13N50U

SLF13N50U

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.68

0.5

3.0

R_θJC

R_θJS

62.5

R_θJA

Maple Semiconductor CO., LTD

http://www.meipusen.com

Rev. 00 June . 2018

12 3 4 5 6 7

中文翻译

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